Semiconductor Line-Type Active Region With Narrow Isolation Gates
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Solution Overview
Problem
As semiconductor devices with line-type active regions decrease in size, the storage node contact area is reduced, leading to deteriorated write characteristics due to the short channel effect, which reduces driving current and increases leakage current.
Innovation Solution
The semiconductor device features active gates and isolation gates of different widths, with the isolation gates being narrower than the active gates, forming a buried gate structure to ensure a larger storage node contact region and improve cell operation characteristics. The manufacturing method involves forming spacers and hard mask patterns to create these gates, ensuring a sufficient contact area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor device size is decreased to increase integration degree, then the unit cell size is reduced, but the storage node contact area is reduced and write characteristics deteriorate
Solution Approach 1:
The patent applies local quality by making the isolation gate narrower than the active gate, creating a non-uniform gate structure. This localized variation in gate width specifically at the isolation regions allows the storage node contact area to be maintained or enlarged while keeping the overall cell size reduced, thus resolving the contradiction between high integration and sufficient contact area
Solution Approach 2:
The gate structure is segmented into different types: active gates for transistor control and narrower isolation gates for device isolation. This segmentation allows different functional requirements to be met simultaneously - the active gates maintain transistor operation while the narrower isolation gates preserve storage node contact area, enabling high integration without sacrificing write characteristics
2Productivity
If the cell transistor size is reduced to increase integration, then the unit cell size decreases, but the driving current is reduced and leakage current increases
Solution Approach 1:
By creating localized narrower regions at the isolation gates while maintaining the active gate dimensions, the patent improves device isolation and reduces leakage current through the isolation regions. This local structural variation allows smaller cell transistors to be used without proportionally increasing leakage, thus enabling higher integration while maintaining reliability
Solution Approach 2:
The patent converts the potential harm of reduced transistor size (increased leakage current due to short channel effect) into a benefit by using the narrower isolation gate structure to enhance device isolation. The reduced dimensions at isolation regions compensate for the leakage issues introduced by smaller transistors, allowing high integration with maintained reliability
3Reliability
If the isolation gate width is equal to the active gate width, then the device isolation is achieved, but the storage node contact region is reduced
Solution Approach 1:
The patent applies local quality by making the isolation gate narrower than the active gate. This creates a non-uniform gate structure where the isolation gate has a reduced width specifically at the regions where it contacts the storage node. This localized width reduction maintains device isolation functionality while preserving or enlarging the storage node contact region, directly resolving the contradiction
Data Source
AI summary
A semiconductor device having a line-type active region and a method for manufacturing the same are disclosed. The semiconductor device includes an active region configured in a successive line type, at least one active gate having a first width and crossing the active region, and an isolation gate having a second width different from the first width and being formed between the active gates. The isolation gate's width and the active gate's width are different from each other to guarantee a large storage node contact region, resulting in increased device operation characteristics (write characteristics).