Linear ICP Source Layout for High-Rate Uniform Plasma Deposition
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Solution Overview
Problem
Conventional inductively coupled plasma (ICP) treatment systems face challenges in achieving high deposition rates, stable operation at high pressures, and homogeneity, particularly due to parasitic coating on internal surfaces and limitations in scalability, especially with curved inductor arrangements.
Innovation Solution
A treatment system with a linear ICP source and a gas deflection arrangement that surrounds the inductor, directing process gas at high velocity towards the substrate, reducing parasitic deposition and enabling high deposition rates and homogeneity over larger substrate widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional ICP-based treatment systems are used, then treatment can be performed, but parasitic coating processes cause significant deposition on internal surfaces leading to high maintenance costs and reduced deposition rate on substrate
Solution Approach 1:
The inductor is divided into multiple segments along the longitudinal direction, with each segment having independent gas supply and control. This segmentation allows targeted gas flow management to direct process gas toward the substrate while preventing parasitic deposition on internal surfaces of the treatment chamber.
Solution Approach 2:
Different regions of the treatment system are provided with different gas flow conditions. The gas supply device supplies process gas at different positions along the longitudinal direction with tailored flow rates and velocities, creating high-velocity directed flow toward the substrate while maintaining lower velocities in regions prone to parasitic deposition.
2Productivity
If conventional ICP-based treatment systems are used, then treatment can be performed, but achieving high deposition rates and stable operating points at high pressures is challenging
Solution Approach 1:
The system enables stable operation at higher pressures by optimizing the inductor geometry and gas flow parameters. The linear inductor configuration combined with controlled gas flow rates and velocities maintains plasma stability and high deposition rates across a broader pressure range, particularly enabling stable operation at pressures where conventional systems struggle.
3Adaptability or versatility
If conventional ICP-based treatment systems with curved inductors are used, then treatment can be performed, but scalability is limited particularly for larger substrate widths
Solution Approach 1:
The inductor is configured as a linear structure extending in the longitudinal direction rather than a curved planar arrangement. This dimensional change from curved to linear configuration enables scalability to larger substrate widths while maintaining treatment homogeneity and simplifying the overall system geometry.
4Manufacturing precision
If conventional ICP-based treatment systems are used, then treatment can be performed, but achieving high treatment homogeneity over larger substrate widths is difficult
Solution Approach 1:
The linear inductor is divided into multiple segments along its length, with each segment capable of independent or coordinated operation. This segmentation enables precise control of plasma distribution across the substrate width, maintaining treatment homogeneity even for large substrate areas by adjusting gas flow and plasma parameters in different longitudinal regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves high deposition rates and homogeneity, reduces parasitic deposition, and allows stable operation at higher pressures, enhancing scalability and reducing maintenance needs.
Implementation Method 1
an inductively coupled plasma (ICP) is excited by an ICP source... The ICP source comprises at least one inductor extending along a longitudinal direction of the ICP source
Implementation Method 2
a gas deflection arrangement (150) located in the process chamber (101)... The gas deflection arrangement extends along the longitudinal direction of the ICP source and partially surrounds the at least one inductor... allows a directed flow of process gas at a higher velocity towards a substrate to be generated
Implementation Method 3
The treatment system includes a gas supply device for one or more process gases... achieving high deposition rates... When used in a deposition system, a high deposition rate can be achieved
Data Source
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Figure 5
AI summary
A treatment system (100) has a process chamber (101) for dynamic or static treatment of at least one substrate. An inductively coupled plasma source, ICP source (120, 120'), has at least one inductor (130a, 130b) that extends in the longitudinal direction of the ICP source (120, 120'), a gas supply device (141, 142) for one or more process gases and a gas directing arrangement (150) which is disposed in the process chamber (101) and extends in the longitudinal direction of the ICP source (120, 120') and partly surrounds the at least one inductor (130a, 130b).