Linear Multi-Crucible Silicon Carbide Growth With Zoned Heating
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Solution Overview
Problem
The high cost and low yield of silicon carbide crystals due to harsh growth conditions, slow growth speed, and excessive internal stress in traditional PVT methods limit their widespread application.
Innovation Solution
A method and apparatus for synchronous growth of silicon carbide crystals in multiple crucibles using a chamber divided into independent growth cavities with a thermal insulation layer and independent heater components, allowing for precise temperature control and simultaneous growth in multiple crucibles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional induction heating is used to heat the graphite crucible, then the heating efficiency is improved, but the radial temperature gradient becomes large causing crystals to crack due to excessive internal stress
Solution Approach 1:
The heating system is segmented into multiple independent heater components arranged at intervals around the crucible, allowing localized temperature control in different radial zones to reduce temperature gradient and prevent crystal cracking
Solution Approach 2:
Different heater components provide differentiated heating to different radial positions of the crucible, with inner radius heaters providing stronger heating and outer radius heaters providing weaker heating to achieve uniform temperature distribution
2Reliability
If traditional PVT growth method is used with single crucible, then the crystal quality is maintained, but the productivity is low and growth cost is high
Solution Approach 1:
Multiple independent growth assemblies with crucibles are merged into a single chamber system, allowing simultaneous growth of multiple crystals to improve productivity while maintaining individual crystal quality through isolated heating and growth control
Solution Approach 2:
The growth chamber is designed as a multi-functional system capable of simultaneously supporting multiple crucibles with independent heating and growth control, enabling parallel processing of multiple crystals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach accelerates crystal growth, reduces internal stress, and significantly improves productivity and cost-effectiveness, enabling the growth of multiple crystals with consistent quality, narrowing the cost gap with single crystal silicon.
Implementation Method 1
heating silicon carbide raw materials contained in a graphite crucible at a temperature of above 2100° C. for sublimation
Implementation Method 2
heating silicon carbide raw materials contained in a graphite crucible at a temperature of above 2100° C. for sublimation
Implementation Method 3
an insulation layer assembly arranged close to inner walls of the chamber wherein a plurality of heater components are arranged at intervals inside the insulation layer assembly, by which the chamber is divided into a plurality of independent growth cavities
Implementation Method 4
An induction coil makes a graphite crucible generate an eddy current to directly heat up
Implementation Method 5
An induction coil makes a graphite crucible generate an eddy current to directly heat up
Data Source
AI summary
The present application discloses a method and apparatus for synchronous growth of silicon carbide crystals in multiple crucibles comprising a chamber and an insulation layer assembly arranged close to inner walls of the chamber wherein the insulation layer assembly is used to divide the chamber into a plurality of independent growth cavities, and each of the growth cavities is provided with an independent growth assembly; wherein the independent growth assembly comprises a graphite crucible, a seed crystal tray arranged on the top of the graphite crucible and a drive assembly arranged at the bottom the crucible.