Pattern Formation Using Linear Spacer Barrier
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Solution Overview
Problem
The increasing integration density of semiconductor devices requires higher resolution in lithographic processes, but existing methods struggle to prevent edge defects such as line-width bias and line-end shortening caused by optical proximity effects, which are time-consuming to correct using optical proximity correction (OPC).
Innovation Solution
A method involving a structure with a substrate and a target layer, where core patterns and a linear spacer pattern are formed on the central area with a gap, and a photoresist is applied to the periphery area, allowing for the removal of the central area not covered by the core and spacer patterns to form a pattern without edge defects, using a first and second litho-etch process to expose the pattern, with the linear spacer pattern acting as a barrier to prevent photoresist overflow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) is performed to correct edge defects, then pattern accuracy is improved, but manufacturing time is increased
Solution Approach 1:
The patent applies preliminary action by forming a mandrel pattern and spacer pattern before the final photo-etching process. The spacer pattern is created in advance to serve as a physical barrier that prevents photoresist overflow during subsequent processing, eliminating the need for time-consuming OPC calculations and iterations after pattern formation
2Ease of manufacture
If conventional photo-etching is used to form patterns, then manufacturing process is simple, but edge defects occur due to photoresist overflow
Solution Approach 1:
The patent introduces an intermediary element - the spacer pattern - that acts as a mediator between the mandrel pattern and the photoresist. This spacer pattern physically blocks photoresist from overflowing into unwanted areas during the photo-etching process, thereby preventing edge defects while maintaining process simplicity
Solution Approach 2:
The patent segments the patterning process into distinct stages: forming the mandrel pattern, forming the spacer pattern, and then performing photo-etching. This segmentation allows each stage to be optimized independently, with the spacer pattern specifically designed to address photoresist overflow issues without complicating the overall manufacturing process
Data Source
AI summary
The present disclosure is related to a method of forming a pattern, including the steps of: providing a structure including a substrate and a target layer, in which the target layer is disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of core patterns and a linear spacer pattern on the central area, in which a width of the linear spacer pattern is wider than 50 nm; covering a photoresist on the periphery area; removing a portion of the central area not covered by the plurality of core patterns and not covered by the linear spacer pattern to form a pattern in the central area, and removing the photoresist, the linear spacer pattern and the plurality of core patterns to expose the pattern.