Linearized Oxide Film Growth for Conformal Semiconductor Oxidation
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Solution Overview
Problem
Current oxidation processes for forming oxide layers in semiconductor substrates result in non-conformal film growth due to reaction kinetics, leading to poor device performance and increased oxidation time is needed for improved conformality, which affects device throughput.
Innovation Solution
A method involving multiple sub-operations with controlled temperature and gas composition changes to achieve a substantially linear growth rate of the oxide film, forming oxide layers in semiconductor substrates using a combination of thermal and plasma processing, with incremental adjustments in temperature and oxygen percentage to ensure conformality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional oxidation processes are used, then oxidation time can be reduced, but oxide film conformality deteriorates resulting in non-conformal film growth
Solution Approach 1:
The oxidation process is divided into multiple sequential sub-operations, each with controlled oxygen percentage and temperature parameters. This segmentation allows the total oxidation to occur in controlled stages, achieving conformal film growth while maintaining reasonable process time
Solution Approach 2:
The patent systematically varies oxidation parameters (oxygen percentage, temperature, pressure) across different sub-operations. By changing these parameters in a controlled sequence, the process achieves linearized growth rates and improved conformality without requiring excessive oxidation time
2Manufacturing precision
If oxidation time is increased to improve conformality, then oxide film uniformity improves, but device throughput deteriorates
Solution Approach 1:
The oxidation process uses dynamic parameter adjustment where oxygen percentage, temperature, and pressure are varied throughout the process duration. This dynamic control enables conformal film growth at optimized time points rather than requiring uniformly long oxidation times
Solution Approach 2:
The patent employs periodic sub-operations with alternating parameter sets (different oxygen percentages and temperatures). This periodic structure allows the system to achieve conformality through controlled cycling rather than continuous constant-parameter oxidation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces conformal oxide films with high conformality (95% to 100%) while maintaining device throughput, improving device performance by ensuring uniform oxide layer thickness across high aspect ratio features.
Implementation Method 1
The oxide layer is formed by exposing the stack to an oxidation process. The oxidation processes are conventionally performed either thermally and/or using plasma.
Implementation Method 2
A first oxide containing portion is formed at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature.
Implementation Method 3
The oxidation processes are conventionally performed either thermally and/or using plasma.
Data Source
AI summary
Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.