Liner Layer Structure for Etch-Stop Semiconductor Openings
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly due to issues with etching processes and the integrity of conductive structures.
Innovation Solution
A semiconductor device design that includes a substrate with a first dielectric layer, a conformally formed liner layer, an energy-removable layer, and a second dielectric layer with etching selectivity, allowing the liner layer to serve as an etching stop and maintaining the profile of openings, thereby simplifying fabrication and enhancing conductive structure performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the dimensions of semiconductor devices are scaled down to meet increasing computing demand, then computing ability is improved, but fabrication complexity and process issues increase
Solution Approach 1:
The patent segments the fabrication process into distinct stages by introducing a first opening formation step before the second opening formation step. The first opening is formed through the first dielectric layer to expose the substrate, and the second opening is formed through the second dielectric layer to expose the energy-removable layer. This segmentation allows each etching process to be independently controlled and optimized, reducing overall fabrication complexity despite device scaling.
Solution Approach 2:
The patent introduces an intermediary energy-removable layer positioned between the first and second dielectric layers. This layer serves as a temporary structure that facilitates the formation of the second opening while protecting underlying structures. The energy-removable layer can be selectively removed after the second opening is formed, simplifying the overall fabrication process and improving yield.
2Device complexity
If conventional etching processes are used without a liner layer, then fabrication steps are reduced, but the profile of openings deteriorates and conductive structure integrity is compromised
Solution Approach 1:
The patent applies preliminary action by forming a liner layer on the substrate before forming the first opening. This liner layer serves as an etching stop layer that prevents over-etching and maintains the integrity of the opening profile. The liner layer is formed conformally on the substrate and remains in place during subsequent etching processes, ensuring precise opening formation without requiring additional process steps.
Solution Approach 2:
The liner layer acts as a cushioning layer that protects the substrate and underlying structures during etching processes. By placing this protective layer beforehand, the patent prevents damage to critical structures while maintaining opening profile integrity, effectively cushioning against potential fabrication defects.
3Device complexity
If the liner layer is not designed with etching selectivity, then material layers are reduced, but the ability to control etching depth and protect underlying structures is lost
Solution Approach 1:
The patent applies local quality by designing the liner layer with specific etching selectivity properties that differ from other material layers. The liner layer exhibits high etching selectivity to the first dielectric layer, allowing it to serve as an effective etching stop layer. This localized property enhancement enables precise control of etching depth and protects underlying structures without requiring additional material layers or complex process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces fabrication complexity and improves the performance of the conductive structure by maintaining the integrity of the opening profile and utilizing the liner layer as an etching stop, leading to enhanced semiconductor device quality and reliability.
Implementation Method 1
The second dielectric layer has etching selectivity to the first liner layer
Data Source
AI summary
The present application discloses a semiconductor device. The semiconductor device includes a substrate; a first dielectric layer positioned on the substrate; a first opening positioned along the first dielectric layer to expose the substrate; a first liner layer conformally positioned in the first opening and on a top surface of the first dielectric layer; an energy-removable layer positioned in the first opening; a second dielectric layer positioned on the first liner layer; and a second opening positioned along the second dielectric layer to expose the energy-removable layer. The second dielectric layer has etching selectivity to the first liner layer.