Liquid Gallium Precursors for Safer Oxide Film Deposition
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Solution Overview
Problem
Current methods for depositing gallium-containing films, such as IGZO, face challenges with pyrophoric and solid precursors that are costly, unsafe, and require expensive equipment, leading to inefficiencies in industrial manufacturing.
Innovation Solution
Development of non-pyrophoric, liquid gallium precursors with aminoamide ligands that are halide-free, thermally stable, and have high vapor pressure, allowing for safer handling and more efficient deposition processes like ALD and CVD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pyrophoric and solid gallium precursors are used for film deposition, then film quality can be achieved, but safety hazards increase and equipment costs rise
Solution Approach 1:
The patent changes the chemical parameters of gallium precursors by developing new molecular structures with aminoamide ligands instead of traditional pyrophoric compounds. This parameter change transforms the precursors from solid to liquid state, eliminates pyrophoricity while maintaining deposition effectiveness, and enables safer handling without compromising film quality
Solution Approach 2:
The patent creates composite gallium precursor molecules combining gallium centers with aminoamide ligand structures. These composite molecules integrate multiple functional properties: liquid state for easy handling, thermal stability for safe storage, and controlled volatility for effective deposition, thereby resolving the contradiction between safety and film quality
2Ease of manufacture
If solid gallium precursors are used, then deposition can proceed, but equipment complexity increases due to sublimator requirements
Solution Approach 1:
The patent employs liquid gallium precursors that can be delivered through liquid feeding systems using pneumatic and hydraulic principles. This eliminates the need for complex sublimators and solid handling mechanisms, simplifying equipment while maintaining deposition capability through controlled vaporization of liquid precursors
3Ease of manufacture
If solid gallium precursors with low vapor pressure are used, then deposition can occur, but feed rate stability decreases
Solution Approach 1:
The patent optimizes the vapor pressure parameter of gallium precursors by designing molecules with appropriate molecular weights and ligand structures. The liquid precursors exhibit controlled vapor pressure that enables stable feed rates through thermal management, improving feed rate stability while maintaining deposition capability
4Manufacturing precision
If conventional CVD or ALD methods are used with solid precursors, then film properties can be controlled, but production cost increases
Solution Approach 1:
The patent changes the physical state parameter from solid to liquid and modifies chemical composition to eliminate pyrophoricity. These parameter changes enable simpler handling procedures, reduced equipment requirements, and lower operational costs while maintaining precise control over film properties through the new liquid precursor formulations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables cost-effective, high-quality deposition of gallium-containing films with improved safety and process control, reducing production costs and increasing deposition rates, suitable for high-volume manufacturing of semiconductor devices.
Implementation Method 1
exposing the substrate to a vapor of a gallium-containing film-forming composition that contains a gallium precursor
Implementation Method 2
depositing at least part of the gallium precursor onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process
Implementation Method 3
exposing the substrate to a vapor of a gallium-containing film-forming composition that contains a gallium precursor and an oxidizer; depositing at least part of the gallium precursor onto the substrate to form the gallium-containing oxide film
Data Source
AI summary
A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula:(NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)] (I)(Cy-N)2Ga[(R3R4N)Cx(R5R6)(NR7)] (II)wherein, R1 to R9 are independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; R1 to R9 may be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.