Liquid Jet Patterning Apparatus for Semiconductor Substrates
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Solution Overview
Problem
The high cost and limitations of existing photolithography processes, such as increased costs for optical exposure apparatus and high defect density in nano-imprinting technology, hinder the development of semiconductor technology, particularly with the continuous shrinkage of critical dimensions.
Innovation Solution
A patterning apparatus and method utilizing liquid jet units to jet anti-etching liquid onto a substrate, combined with exposure units to cure the liquid and form anti-etching patterns, allowing for precise control of line width and thickness without the need for expensive lenses or reticles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used for patterning, then manufacturing precision is maintained, but manufacturing cost increases significantly with substrate diameter
Solution Approach 1:
The patent extracts and removes the expensive optical components (lenses and reticles) from the patterning system. Instead of using traditional photolithography optics, the invention uses direct digital writing with electron beams or other particle beams to draw patterns, eliminating the need for optical projection systems and high-cost photomasks.
Solution Approach 2:
The patent replaces the optical-mechanical photolithography system with a direct digital writing system using electron beams or particle beams. This substitution eliminates complex optical components and replaces them with a more straightforward beam-based patterning approach that reduces cost while maintaining precision.
2Ease of manufacture
If multiple e-beam lithography technology is used to substitute photolithography, then manufacturing cost is reduced, but productivity decreases due to limited electron current
Solution Approach 1:
The patent divides the patterning field into multiple independently controllable electron guns or beam sources arranged in arrays. Each gun can write patterns simultaneously or in parallel, thereby increasing overall throughput while maintaining the cost advantages of direct digital writing without requiring expensive optical systems.
Solution Approach 2:
The patent creates a multi-functional system where multiple electron guns or beam sources can be used simultaneously for different patterning tasks. The system can handle various pattern types and sizes with a single platform, improving productivity through parallel operation while keeping manufacturing costs lower than traditional photolithography.
3Ease of manufacture
If nano-imprinting technology is used to substitute photolithography, then manufacturing cost is reduced, but manufacturing precision deteriorates due to high defect density
Solution Approach 1:
The patent replaces the mechanical nano-imprinting process with a beam-based direct digital writing system. Instead of physically pressing stamps or molds onto substrates (which causes high defect density), the invention uses electron beams or particle beams to directly draw patterns, eliminating mechanical contact and associated defects while maintaining low manufacturing costs.
Solution Approach 2:
The patent extracts and eliminates the mechanical stamping and molding components inherent in nano-imprinting technology. By removing these mechanical elements that cause high defect density, the system achieves both low cost and high pattern quality through direct digital beam writing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs by achieving high-resolution patterning with lower expenses and higher throughput, addressing the limitations of current semiconductor patterning technologies.
Implementation Method 1
exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid
Implementation Method 2
liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate
Data Source
AI summary
A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.