Liquid Plasma Nozzle for Precise Substrate Edge Etching
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Solution Overview
Problem
Existing dry etching processes using gas plasma struggle to accurately deliver plasma to specific areas on a substrate, such as the edge, leading to unintended removal of thin films on metal interconnections and reduced substrate treating efficiency.
Innovation Solution
A nozzle design that includes a body with a liquid supply unit, gas supply unit, and electrodes to generate plasma within a treatment liquid, allowing precise delivery of liquid plasma to targeted substrate areas, with adjustable electrode positions for controlled plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas plasma is used for dry etching, then the etching process can be performed, but the plasma cannot be accurately delivered to the target position on the substrate
Solution Approach 1:
The patent changes the physical state of the plasma delivery medium from gas to liquid. The liquid plasma precursor is delivered through a nozzle with precise spatial control, and plasma is generated at the target location by applying RF power to the liquid film on the substrate. This parameter change enables accurate delivery to the target position while maintaining process reliability.
Solution Approach 2:
The patent introduces a liquid precursor as an intermediary substance that carries plasma-forming components to the substrate. The liquid is delivered accurately through a nozzle, forms a film on the substrate, and then converts to plasma when RF power is applied. This intermediary enables precise spatial control of plasma generation.
2Manufacturing precision
If plasma is delivered to the edge area for bevel etching, then the thin film on the edge can be removed, but the plasma may be delivered to areas where metal interconnection exists causing unintended film removal
Solution Approach 1:
The patent applies local quality by delivering liquid plasma precursor only to the specific edge area requiring etching through a positioned nozzle. The liquid forms a localized film that converts to plasma only where needed. This ensures that plasma is generated precisely at the target location without affecting adjacent areas containing metal interconnections, thereby preventing unintended film removal.
Solution Approach 2:
The system dynamically controls the nozzle position and liquid delivery to match the precise location where etching is required. The nozzle can be positioned and moved to deliver liquid plasma precursor only to the specific edge regions that need treatment, providing dynamic spatial control that prevents harm to other substrate areas.
3Productivity
If liquid plasma is generated in the nozzle, then plasma can be delivered to the substrate, but the plasma generation efficiency may be reduced
Solution Approach 1:
The system performs preliminary action by delivering the liquid plasma precursor to the substrate before plasma generation. The liquid is precisely delivered and forms a film on the substrate surface, and only then is RF power applied to generate plasma. This preliminary delivery ensures that energy is efficiently used for plasma generation at the target location without waste, improving both productivity and energy efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the accuracy and efficiency of plasma delivery to desired substrate locations, minimizing unintended film removal and improving semiconductor manufacturing quality.
Implementation Method 1
electrodes that generate plasma in the inner space
Implementation Method 2
electrodes that generate plasma in the inner space
Implementation Method 3
a liquid supply unit that supplies a liquid into the inner space
Implementation Method 4
a gas supply unit that supplies an etching gas into the inner space
Data Source
AI summary
An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.