Liquid Processing Apparatus Dynamic Etching Control

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Solution Overview

Problem

In semiconductor manufacturing, existing immersion etching processes face challenges in dynamically adjusting processing conditions, such as etching rates, to accommodate varying substrate patterns, leading to inefficient processing and potential damage to substrate features like blocking insulating films.

Innovation Solution

A liquid processing apparatus and method that involves immersing substrates in a processing liquid, detecting a conversion point where processing conditions change, and adjusting parameters like phosphoric acid concentration and silicon concentration, along with controlling the processing liquid supply and temperature, to optimize etching rates based on substrate patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the substrate is immersed in processing liquid for etching, then the etching process can be performed, but the processing conditions cannot be dynamically adjusted to accommodate varying substrate patterns

Engineering Contradiction:

Improveadaptability to varying substrate patternsVSAvoidcomplexity of processing condition control

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic adjustment of processing conditions during immersion etching by detecting conversion points (such as changes in etching rate or liquid characteristics) and automatically modifying parameters like phosphoric acid concentration, silicon concentration, and temperature. This transforms the static immersion etching process into a dynamically adaptable one that can respond to varying substrate patterns in real-time.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent changes physical and chemical parameters of the processing liquid (phosphoric acid concentration, silicon concentration, temperature) based on detected conversion points during etching. These parameter changes enable the system to adapt to different substrate patterns and processing stages, resolving the contradiction between adaptability and control complexity.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If the etching rate is increased to improve processing efficiency, then productivity increases, but blocking insulating films may be excessively removed causing damage

Engineering Contradiction:

Improveetching processing efficiencyVSAvoidprecision of blocking insulating film removal

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent employs feedback control by continuously monitoring etching progress through detection of conversion points (changes in etching rate, liquid concentration, or temperature). When a conversion point is detected, the system automatically adjusts processing conditions to prevent excessive removal of blocking insulating films while maintaining high etching efficiency. This closed-loop feedback mechanism resolves the contradiction between productivity and precision.

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The patent implements periodic adjustment of processing conditions by detecting conversion points during etching and making corresponding changes to phosphoric acid concentration, silicon concentration, or temperature. This periodic control enables the system to maintain high productivity while precisely controlling the removal of blocking insulating films at critical moments during the etching process.

Inventive Principle:

Principle #19Periodic action

3Manufacturing precision

If the processing liquid composition is changed to optimize etching for different patterns, then etching quality improves, but the processing time increases due to multiple adjustments

Engineering Contradiction:

Improveetching qualityVSAvoidprocessing time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent maintains continuous etching action by dynamically adjusting processing liquid composition during the etching process rather than performing multiple separate etching steps. The conversion point detection and automatic parameter adjustment enable continuous optimization of etching quality without interrupting the overall processing flow, thus reducing total processing time while maintaining high etching quality.

Inventive Principle:

Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise control of etching rates and processing conditions at critical points during immersion etching, effectively preventing excessive removal of blocking insulating films and improving the accuracy and efficiency of semiconductor substrate processing.

Implementation Method 1

a heater configured to heat the processing liquid

Methodology Applied

Scientific EffectHeating: Heating

Implementation Method 2

immersing a substrate in the processing liquid, thereby processing the substrate

Methodology Applied

Scientific EffectImmersion etching:

Data Source

PatentUS10840081B2Liquid processing apparatus, liquid processing method, and storage medium

Publication Date: 2020.11.17 TOKYO ELECTRON LTD

AI summary

A substrate liquid processing method includes immersing the substrate in a processing liquid for processing the substrate, detecting a conversion point at which a processing condition of the processing the substrate is changed, and changing the processing condition when the conversion point is detected.