Liquid Lithium Jet EUV Source for Mask Inspection

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Solution Overview

Problem

Current EUV light sources for lithographic mask inspection face challenges such as high cost, complexity, and limited brightness, with existing technologies requiring frequent replacement of components and suffering from contamination and erosion issues, which hinder efficient zero defect control in nanolithography.

Innovation Solution

A high-brightness EUV light source is developed using a continuous liquid lithium jet as the laser target, circulated in a closed loop system, with a collector mirror placed outside the vacuum chamber in an inert gas environment, and an EUV spectral purity filter to prevent contamination and extend the lifetime of optical components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a Z-pinch discharge is used as EUV light source, then the source is simple and compact, but the brightness is insufficient (B13,5 ~10 W/mm²sr) and the ceramic bush erodes requiring frequent replacement

Engineering Contradiction:
Improvesource structureVSAvoidEUV brightness
Core Design Contradiction:
Device complexityVSIllumination intensity

Solution Approach 1:

The patent replaces the mechanical Z-pinch discharge system with a laser-produced plasma (LPP) system. The laser beam creates plasma in a gas jet, eliminating the need for complex electrical discharge mechanisms and ceramic bushes. This substitution achieves higher brightness (B13,5 ≥30 W/mm²sr) while maintaining structural simplicity, as the laser system requires no moving parts or erodible components in the interaction zone.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Illumination intensity

If xenon is used as target material in LPP, then high brightness is achieved, but the system becomes complicated with frequent mirror protection needs and high operating costs

Engineering Contradiction:
ImproveEUV brightnessVSAvoidrecycling system
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent changes the target material parameter from xenon to a lighter gas such as helium, neon, or argon. This parameter change fundamentally alters the plasma characteristics, reducing the formation of heavy ion contaminants that require complex protection and recycling systems. The lighter gas targets achieve sufficient brightness while dramatically simplifying the overall system architecture and reducing operational complexity.

Inventive Principle:
Principle #35Parameter changes

3Power

If tin droplets are used as laser target, then powerful EUV light is generated, but the system requires complex pre-pulse laser synchronization and frequent target replacement

Engineering Contradiction:
ImproveEUV powerVSAvoidlaser system
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent replaces the solid tin droplet target system with a gas jet system. The gas flows through a nozzle to create a controlled jet that interacts with the laser beam. This pneumatic approach eliminates the need for complex droplet generation, acceleration, and synchronization mechanisms. The gas jet provides a continuous, stable target that simplifies the laser system requirements while maintaining high EUV power output.

Inventive Principle:
Principle #29Pneumatics and hydraulics

4Length of stationary object

If the collector mirror is placed inside the vacuum chamber, then the light path is short, but the mirror suffers from contamination and erosion reducing its lifetime

Engineering Contradiction:
Improvelight pathVSAvoidmirror lifetime
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

The patent introduces a differential pumping system with an intermediate pressure region between the vacuum chamber and the collector mirror environment. This intermediary pressure zone acts as a barrier, allowing the mirror to be protected from direct exposure to the harsh vacuum plasma environment while maintaining the necessary light path. The differential pumping creates a pressure gradient that prevents contaminant migration to the mirror surface, extending its operational lifetime.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides a reliable, cost-effective, and stable EUV light source with high spatial and energy stability, enabling efficient actinic inspection of lithographic masks and extending the operational life of optical components.

Implementation Method 1

irradiating at high repetition rate the continuous liquid lithium jet by a laser beam introduced into the interaction zone through an input window of the vacuum chamber

Methodology Applied
Scientific EffectLaser-produced plasma: Laser Ablation

Implementation Method 2

producing a laser target as a continuous liquid lithium jet... irradiating... by a laser beam... led out EUV light from the laser-produced plasma

Methodology Applied
Scientific EffectEUV radiation emission: Luminescence

Data Source

PatentUS9476841B1High-brightness LPP EUV light source
Publication Date: 2016.10.25 ISTEQ BV
  • US9476841B1 patent drawing
  • US9476841B1 patent drawing
  • US9476841B1 patent drawing

AI summary

The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180° C. may be adjusted around the target jet.