Lithographic Metrology Mark Placement for Stitching Alignment

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Solution Overview

Problem

In lithographic processes, accurately aligning large image sensors or devices requires precise stitching of image portions exceeding the projection beam's cross-sectional area, often undetectable until electrical testing, leading to potential device failure and significant time and resource waste.

Innovation Solution

A method and apparatus that project metrology marks outside the composite image area during the stitching process, allowing real-time alignment measurement of image portions, ensuring accurate positioning and reducing errors by determining the relative positions of metrology marks to assess image portion alignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If image portions are projected sequentially onto adjacent target portions to form a composite image, then the area of substrate that can be imaged exceeds the maximum cross sectional area of the projection beam, but alignment accuracy between adjacent image portions deteriorates and becomes undetectable until electrical testing

Engineering Contradiction:
Improveimaged areaVSAvoidalignment accuracy
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The patent introduces metrology marks as intermediary reference objects that are projected alongside image portions onto the substrate. These marks serve as mediators for measuring and verifying the alignment between adjacent image portions, enabling detection and correction of stitching errors without requiring completion of the entire device.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements a feedback mechanism by measuring the relative positions of metrology marks after projection and using this measurement information to determine and correct the relative positions of adjacent image portions. This closed-loop feedback enables real-time alignment verification and correction during the lithographic process.

Inventive Principle:
Principle #23Feedback

2Measurement precision

If metrology marks are projected inside the composite image area, then alignment measurement is possible, but the area available for active device regions is reduced

Engineering Contradiction:
Improvealignment measurement capabilityVSAvoidactive device area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent relocates metrology marks from the two-dimensional active image area to the third spatial dimension by projecting them in the scribe lane region outside the composite image boundaries. This dimensional relocation allows alignment measurement functionality to coexist with maximized active device area, as the marks occupy space that would otherwise be unused or used for device separation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Measurement precision

If alignment errors are detected only after device completion through electrical testing, then manufacturing precision can be verified, but time and resources are wasted on defective devices

Engineering Contradiction:
Improvealignment verificationVSAvoidtime to detect errors
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs alignment measurement and verification as a preliminary action during the lithographic exposure process itself, by projecting and measuring metrology marks immediately after each image portion is formed. This early detection prevents progression of defective devices through subsequent manufacturing steps, eliminating waste of time and resources that would occur with post-completion testing.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS7879514B2Lithographic method and patterning device
Publication Date: 2011.02.01 ASML NETHERLANDS BV
  • US7879514B2 patent drawing
  • US7879514B2 patent drawing
  • US7879514B2 patent drawing

AI summary

A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.