Lithographic Apparatus Beam Intensity Control
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Solution Overview
Problem
In lithographic or exposure processes, variations in the profiles of radiation beams emitted by self-emissive contrast devices lead to undesirable interactions between adjacent imaging points, causing cross-talk or coupling between beams, which affect the accuracy of the desired pattern on the substrate.
Innovation Solution
An exposure apparatus with a radiation source producing individually controllable beams, a projection system to project these beams onto a target, and a controller that calculates and adjusts the intensity of each beam based on its position and rotation relative to the projection system to minimize deviations from a nominal profile, ensuring precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If self-emissive contrast devices are used to generate radiation beams, then pattern formation speed is improved, but beam profile variation increases causing cross-talk between adjacent beams
Solution Approach 1:
The system dynamically adjusts the intensity parameter of each radiation beam based on its position and rotation relative to the projection system. By calculating and modifying intensity values for individual beams, the system compensates for profile variations caused by manufacturing tolerances and environmental factors, thereby reducing cross-talk while maintaining high-speed patterning capability
Solution Approach 2:
The invention applies position-specific intensity adjustments to each radiation beam based on its unique location and orientation in the array. Rather than uniform treatment, each beam receives customized intensity calibration that accounts for local variations in the projection system, ensuring optimal performance for beams at different positions without compromising overall system productivity
2Productivity
If beam intensity is increased to reduce processing time, then productivity is improved, but cross-talk between adjacent beams increases
Solution Approach 1:
The system calculates position-dependent intensity values that optimize exposure while minimizing cross-talk. By adjusting the intensity parameter for each beam based on its specific location and rotation, the system enables higher overall processing speed without proportionally increasing cross-talk, as each beam's intensity is precisely tailored to its local requirements
3Manufacturing precision
If manufacturing tolerances of self-emissive contrast devices are reduced to improve beam profile consistency, then manufacturing precision is improved, but device complexity and cost increase
Solution Approach 1:
The system performs self-calibration by automatically calculating and applying intensity corrections for each beam based on its measured or calculated position and rotation characteristics. This self-adjusting mechanism compensates for manufacturing variations without requiring manual intervention or complex manufacturing processes, thereby achieving high beam profile consistency while maintaining manufacturing simplicity
Solution Approach 2:
The invention implements a feedback mechanism where the actual position and rotation of each self-emissive contrast device are measured or calculated, and this information is used to adjust the intensity of corresponding beams. This closed-loop approach compensates for manufacturing tolerances dynamically, achieving high precision without requiring extremely tight manufacturing controls
Data Source
AI summary
The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.