Lithographic Overlay Correction via Grating Asymmetry Measurement

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Solution Overview

Problem

Lithographic processes face significant alignment and overlay errors due to asymmetry in alignment and overlay gratings, which are not effectively measured by existing Diffraction-Based Overlay (DBO) techniques, leading to inaccuracies in layer alignment and device performance.

Innovation Solution

A method and apparatus that measure the transverse profiles of overlay and alignment markers to correct for asymmetry, using radiation projection and detection systems to determine and adjust the position of alignment markers and measure lateral overlays, thereby improving alignment and overlay accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If Diffraction-Based Overlay (DBO) techniques are used to measure overlay, then measurement speed is improved, but measurement precision deteriorates due to inability to detect asymmetry in gratings

Engineering Contradiction:
Improvemeasurement speedVSAvoidoverlay measurement precision
Core Design Contradiction:
SpeedVSMeasurement precision

Solution Approach 1:

The system performs preliminary measurement of the transverse profile of the overlay grating using scatterometry before conducting the overlay measurement. This preliminary action characterizes the grating asymmetry in advance, allowing the subsequent overlay measurement to compensate for the detected asymmetry and achieve both speed and precision.

Inventive Principle:
Principle #10Preliminary action

2Speed

If alignment gratings are used for alignment, then alignment speed is improved, but alignment precision deteriorates due to asymmetry in the gratings

Engineering Contradiction:
Improvealignment speedVSAvoidalignment precision
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The system measures the transverse profile of the alignment grating and feeds this information back to correct the alignment measurement. The feedback mechanism allows the system to compensate for grating asymmetry by adjusting the reference profile, thereby maintaining both fast alignment speed and high alignment precision.

Inventive Principle:
Principle #23Feedback

3Device complexity

If conventional overlay measurement methods are used, then device complexity is reduced, but overlay error increases due to asymmetry effects

Engineering Contradiction:
Improvemeasurement system complexityVSAvoidoverlay accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The system changes the measurement parameter from simple intensity-based overlay detection to transverse profile characterization using scatterometry. By measuring the shape and asymmetry of the grating profile, the system can distinguish between actual overlay errors and apparent errors caused by grating asymmetry, achieving higher precision without excessive complexity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces alignment and overlay errors by directly addressing asymmetry in gratings, enhancing the precision of layer alignment and improving device yield and performance.

Implementation Method 1

a scatterometer in which a beam of radiation is directed onto a target on the surface of the substrate and properties of the scattered or reflected beam are measured

Methodology Applied
Scientific EffectScattering: Scattering

Implementation Method 2

properties of the scattered or reflected beam are measured. By comparing the properties of the beam before and after it has been reflected or scattered by the substrate

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS9163935B2Device manufacturing method and associated lithographic apparatus, inspection apparatus, and lithographic processing cell
Publication Date: 2015.10.20 ASML NETHERLANDS BV
  • US9163935B2 patent drawing
  • US9163935B2 patent drawing
  • US9163935B2 patent drawing

AI summary

Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.