Lithography System Absorbed Power Compensation
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Solution Overview
Problem
Existing lithography systems face inefficiencies and prolonged processing times due to the absorption of thermal energy by semiconductor wafers during the lithography process, leading to pattern deformation and reduced throughput.
Innovation Solution
A lithography system equipped with a detecting module and monitoring device that calculates absorbed power data using EUV light beams and reference data to compensate for thermal effects, allowing for real-time pattern correction and improved wafer throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithography is performed with high-power laser beams, then pattern formation capability is improved, but thermal energy absorption by the wafer increases causing pattern deformation
Solution Approach 1:
The system performs preliminary detection of absorbed power before completing the lithography process. The detecting module measures thermal energy absorption in real-time, and the monitoring device uses this data to calculate compensation values that are applied to subsequent processing areas, preventing thermal deformation before it occurs.
Solution Approach 2:
The system implements a feedback mechanism where the detecting module continuously monitors absorbed power during lithography, and the monitoring device adjusts exposure parameters based on this feedback. The compensation value calculated from detected absorbed power is fed back to control the light source device, creating a closed-loop system that maintains pattern accuracy despite thermal effects.
2Productivity
If traditional lithography processing is performed without real-time thermal monitoring, then processing speed is maintained, but pattern accuracy deteriorates due to undetected thermal effects
Solution Approach 1:
The detecting module operates continuously throughout the lithography process, enabling real-time detection of absorbed power without interrupting the manufacturing flow. This continuous monitoring allows the system to maintain high productivity while simultaneously ensuring pattern accuracy through ongoing thermal effect compensation.
Solution Approach 2:
The system performs preliminary detection of absorbed power characteristics before completing the full lithography process. By detecting thermal effects early and calculating compensation values in real-time, the system can adjust subsequent exposure parameters to maintain pattern accuracy without requiring complete process interruption or rework.
3Measurement precision
If absorbed power detection is performed thoroughly across the entire wafer, then thermal compensation accuracy is improved, but processing time increases
Solution Approach 1:
The system performs absorbed power detection on a representative first processing area rather than waiting to detect all areas. This partial detection approach provides sufficient information to calculate compensation values that are then applied to subsequent processing areas, achieving adequate measurement precision without the time cost of detecting the entire wafer.
Solution Approach 2:
The system performs preliminary detection of absorbed power characteristics in a first processing area before completing lithography on the entire wafer. This early detection enables real-time calculation of compensation values that are applied to subsequent areas, achieving accurate thermal compensation without requiring time-consuming complete wafer detection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system significantly reduces the time required to detect absorbed power, enabling faster and more accurate pattern formation on semiconductor wafers, minimizing thermal deformation and enhancing overall processing efficiency.
Implementation Method 1
One type of EUV light source is laser-produced plasma (LPP). LPP technology produces EUV light by focusing a high-power laser beam onto small fuel target droplets to form highly ionized plasma that emits EUV radiation with a peak of maximum emission at 13.5 nm.
Implementation Method 2
there is a growing need to perform higher-resolution lithography processes... decreasing the heating effects on the wafer during lithography process... the absorption of thermal energy by semiconductor wafers during the lithography process, leading to pattern deformation
Data Source
AI summary
A lithography system is provided and includes a light source device configured to emit a processing light beam onto the semiconductor wafer, to generate a penetrating light beam and a reflected light beam. The lithography system further includes a detecting module having a first detector and a second detector. The first detector is configured to receive the penetrating light beam to generate first power data, and the second detector is configured to receive the reflected light beam to generate second power data. The lithography system also includes a monitoring device configured to calculate absorbed power data of the semiconductor wafer according to the first power data, the second power data and reference power data of a reference light beam and configured to compensate for a pattern formed on the semiconductor wafer resulting from the processing light beam according to the absorbed power data and reference information.