Lithography Alignment Method for Stress-Induced Position Gaps

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Solution Overview

Problem

The accuracy of alignment in photolithography processes is compromised by position gaps resulting from stress on the pattern at the alignment destination, which existing technologies fail to adequately address.

Innovation Solution

An alignment method that calculates position gaps in a device area based on applied stress and corrects exposure conditions in the lithography process using a system comprising a surface shape measurement device, stress calculation unit, position gap calculation unit, and correction value calculation unit to set control parameters for the patterning device, ensuring accurate alignment despite stress-induced position gaps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If stress is applied to the device area during lithography, then productivity can be increased through faster processing, but position gaps occur that degrade alignment accuracy

Engineering Contradiction:
Improvelithography processing speedVSAvoidalignment accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent calculates position gaps based on stress distribution before the lithography process begins. By pre-determining the magnitude and direction of position gaps caused by stress, the system can compensate for these gaps in advance by adjusting the writing positions of the patterning device, thereby maintaining alignment accuracy even when stress-induced position gaps occur during high-speed processing

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies exposure conditions (such as writing positions and scanning parameters) based on calculated position gap data. By changing these parameters in response to predicted stress effects, the system compensates for alignment errors while maintaining high productivity during the lithography process

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If stress compensation calculations are performed for the entire device area, then alignment accuracy is improved, but calculation time and system complexity increase

Engineering Contradiction:
Improvealignment accuracyVSAvoidsystem complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent divides the device area into multiple regions and calculates position gaps for each region separately based on local stress characteristics. This localized approach allows the system to achieve accurate compensation throughout the entire device area while reducing the overall calculation complexity compared to treating the entire area as a single unit

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the stress calculation and compensation process into distinct components: stress distribution calculation, position gap calculation, and exposure condition correction. This segmentation allows each component to be optimized independently and facilitates efficient implementation of the overall compensation system

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10283392B2Alignment method, pattern formation system, and exposure device
Publication Date: 2019.05.07 KIOXIA CORP
  • US10283392B2 patent drawing
  • US10283392B2 patent drawing
  • US10283392B2 patent drawing

AI summary

According to one embodiment, an alignment method includes calculating a position gap of a predetermined point in a device area of a wafer based on a stress applied to the device area, and correcting an exposure condition in a lithography process of the device area based on the position gap of the predetermined point.