Lithography Beam Correction for Non-Planar Topography
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Solution Overview
Problem
Existing methods for lithographically producing target structures on non-planar initial structures face challenges such as interaction of the lithography beam with the initial structure, leading to changes in the beam profile and target structure, which limits high-resolution, three-dimensional patterning and throughput in micro- and nanotechnology applications.
Innovation Solution
A method and device that detect the topography of the non-planar initial structure, use test parameters to determine interaction effects, and adjust lithography beam parameters to minimize changes, allowing for precise production of high-resolution target structures by exposing a photoresist with a lithography beam and subsequent development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a lithography beam with high numerical aperture is used to achieve high-resolution three-dimensional patterning, then the resolution and detail of the target structure are improved, but the interaction with the non-planar initial structure causes beam profile deformation and changes in the target structure
Solution Approach 1:
The patent applies preliminary action by detecting the topography of the non-planar initial structure before lithography and using this information to pre-calculate and apply correction parameters to the lithography beam. This allows the beam profile to be compensated in advance for the known interactions with the initial structure, maintaining both high resolution and beam stability during the lithography process.
Solution Approach 2:
The patent implements feedback by using the detected topography information of the initial structure to dynamically adjust lithography parameters. The system measures the actual beam profile changes caused by interaction with the non-planar structure and uses this feedback to correct subsequent exposures, ensuring consistent high-resolution patterning despite the complex initial surface geometry.
2Adaptability or versatility
If the lithography beam interacts with the non-planar initial structure to produce target structures, then three-dimensional patterning is achieved, but the interaction leads to changes in the target structure and reduced manufacturing precision
Solution Approach 1:
The system performs preliminary detection of the initial structure's topography and pre-calculates the expected beam interactions before lithography begins. This allows the lithography parameters to be optimized in advance to compensate for the known three-dimensional effects, enabling accurate 3D patterning while maintaining target structure precision.
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting lithography beam parameters such as numerical aperture, exposure dose, and focal position based on the detected initial structure topography. These parameter modifications compensate for the interactions between the beam and non-planar surfaces, enabling precise three-dimensional patterning while maintaining manufacturing accuracy.
3Productivity
If conventional lithography methods are used on non-planar structures without correction, then the process is simple and fast, but the throughput and precision are limited due to beam interactions
Solution Approach 1:
The system performs preliminary topography detection and correction parameter calculation in advance, allowing the actual lithography process to proceed efficiently without real-time iterations. This preliminary preparation enables both high precision and improved throughput by avoiding repeated corrections during production.
Solution Approach 2:
The patent implements a feedback mechanism where topography information is used to adjust lithography parameters, improving precision without significantly increasing cycle time. The feedback is applied efficiently through pre-calculated correction maps that can be applied rapidly during the lithography process, maintaining high productivity while achieving superior precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of high-resolution, three-dimensional target structures with improved precision and throughput by reducing the impact of initial structure interactions on the lithography beam, enhancing industrial fabrication capabilities.
Implementation Method 1
transparent partial regions of the initial structure can contribute to a change in a wavefront of the lithography beam
Implementation Method 2
non-transparent partial regions of the initial structure can lead to a shading of parts of the lithography beam
Implementation Method 3
producing ellipsoidal three-dimensional volume elements, which are also referred to as 'voxels'
Data Source
AI summary
Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.