Lithography Coating Composition Purification via Adsorption and Filtration

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Solution Overview

Problem

The miniaturization of semiconductor device patterns leads to increased aspect ratios in photoresist films, causing pattern collapse and accuracy issues, and metal impurities in coating films used in multilayer resist methods result in electrical faults and reduced production yield due to etching defects.

Innovation Solution

A method using a producing apparatus with a metal adsorbent and filter to circulate a solvent and remove metal impurities, followed by homogenization with raw materials to prepare a coating film composition, effectively reducing metal impurities and microscopic foreign matter.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If the thickness of the photoresist film is reduced to maintain proper aspect ratio during miniaturization, then pattern collapse is prevented, but accuracy of pattern transfer to the substrate deteriorates

Engineering Contradiction:
Improveaspect ratio of photoresist patternVSAvoidaccuracy of pattern transfer
Core Design Contradiction:
ShapeVSManufacturing precision

Solution Approach 1:

The invention divides the single photoresist film into multiple layers (first photoresist film and second photoresist film with different etching selectivity). This segmentation allows each layer to have optimized thickness for its specific function, preventing pattern collapse in the upper layer while maintaining pattern transfer accuracy to the substrate through the lower layer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first photoresist film acts as an intermediary layer between the second photoresist film and the substrate. It mediates the pattern transfer process by providing a layer with different etching selectivity that facilitates accurate pattern transfer to the substrate while allowing the second photoresist film to maintain proper aspect ratio.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If metal impurities are present in the coating film composition, then the composition can be produced using conventional methods, but etching defects occur and production yield deteriorates

Engineering Contradiction:
Improveconventional production methodVSAvoidproduction yield
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The invention applies preliminary purification actions to the coating film composition before it is used in the multilayer resist method. The composition undergoes filtration and purification processes to remove metal impurities that would otherwise cause etching defects and reduce production yield during subsequent manufacturing steps.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly reduces etching defects, improving the production yield of semiconductor devices by minimizing metal impurities and enhancing the accuracy of pattern transfer during the dry etching process.

Implementation Method 1

circulating the solvent in the producing apparatus to adsorb a metal impurity by the metal adsorbent

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

circulating the prepared composition for forming a coating film for a lithography in the producing apparatus to remove a microscopic foreign matter by the filter

Methodology Applied
Scientific EffectFiltration: Filter (physical)

Data Source

PatentUS10591817B2Method for producing composition for forming coating film for lithography and patterning process
Publication Date: 2020.03.17 SHIN ETSU CHEMICAL CO LTD
  • US10591817B2 patent drawing
  • US10591817B2 patent drawing
  • US10591817B2 patent drawing

AI summary

The present invention provides a method for producing a composition for forming a coating film for a lithography used in manufacture of a semiconductor device by using a producing apparatus provided with a metal adsorbent and a filter, comprising the steps of: (1) introducing a solvent used in the composition into the producing apparatus, (2) circulating the solvent in the producing apparatus to adsorb a metal impurity by the metal adsorbent, (3) adding a raw material of the composition into the circulated solvent and homogenizing them to prepare the composition, and (4) circulating the prepared composition in the producing apparatus to remove a microscopic foreign matter by the filter. This method enables to produce a composition for forming a coating film for a lithography with its metal impurities, which cause an etching defect, extremely reduced.