Projection Lithography Defect Qualification by Contour Deviation

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Solution Overview

Problem

Existing metrology systems struggle to reproducibly qualify defect structures in lithography masks and wafers, particularly in the absence of a specified target contour, leading to inefficiencies in identifying and documenting deviations.

Innovation Solution

A method that determines a maximum part-field-actual difference as a multiple of the standard deviation of intensity distribution, allowing for reproducible defect qualification, and identifies deviations independently of the target contour shape, using EUV or DUV wavelengths and SEM imaging, with optional target contour specification through simulation or empirical values.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a target contour is specified for defect qualification, then measurement precision is improved, but device complexity increases due to the need for simulation or empirical data

Engineering Contradiction:
Improvedefect qualification accuracyVSAvoidsystem complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by specifying target contours in advance through simulation or empirical measurements before actual defect qualification. This allows the system to have predefined reference values ready, improving measurement precision without requiring complex real-time calculations during inspection

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses copying by creating target contours from simulated images of defect-free structures or empirical measurements. These copied reference contours serve as the basis for comparison during defect qualification, enabling accurate defect detection without requiring complex physical reference samples

Inventive Principle:
Principle #26Copying

2Ease of operation

If defect qualification is performed without target contour specification, then ease of operation is improved, but measurement precision deteriorates

Engineering Contradiction:
Improveoperational simplicityVSAvoiddefect qualification accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent applies self-service by enabling the system to automatically generate or retrieve target contours without requiring manual specification by the operator. The system can use simulated images or empirical data to create reference contours automatically, maintaining ease of operation while ensuring measurement precision through the use of these automatically generated references

Inventive Principle:
Principle #25Self-service

3Adaptability or versatility

If the defect qualification method is made generally applicable to different target contours, then adaptability is improved, but difficulty of detecting and measuring increases

Engineering Contradiction:
Improveapplicability to different contoursVSAvoidmeasurement complexity
Core Design Contradiction:
Adaptability or versatilityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent applies universality by creating a defect qualification method that can handle various target contour types (circular, rectangular, irregular) through a unified approach. The system uses general-purpose target contour specifications that can be applied across different structure types, improving adaptability while maintaining consistent measurement procedures that do not require specialized handling for each contour type

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250314602A1Method for qualifying a defect structure on an object utilizable in projection lithography
Publication Date: 2025.10.09 CARL ZEISS SMT GMBH
  • US20250314602A1 patent drawing
  • US20250314602A1 patent drawing
  • US20250314602A1 patent drawing

AI summary

To qualify a defect structure on an object utilizable in projection lithography, a target contour of at least one structure to be measured is first specified on the object. Furthermore, an actual contour of the structure is measured. A deviation between the target contour and the actual contour is determined perpendicularly to the profile of the target contour. A specified value of the determined deviation is documented as a defect qualification parameter of the structure to be measured. A further qualification method can dispense with a specified target contour. The respective qualification method enhances the significance of a defect qualification, which can be carried out in particular with a metrology system.