Lithography Mask Marking Volume Reduction via Particle Beam Etching
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Solution Overview
Problem
In the semiconductor industry, as lithography objects with increasingly smaller structure dimensions and complex materials are developed, the removal of markings used for particle beam processing can lead to optical errors and material damage due to over-etching, which is time-consuming and costly, and complete removal is not always feasible or optimal.
Innovation Solution
A method using a particle beam and etching gas to reduce the volume of markings on lithography objects without complete removal, allowing the markings to remain on the object, thereby minimizing exposure to etching components and avoiding material damage, while maintaining optical specifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If complete removal of markings is performed to avoid optical errors, then optical quality is improved, but processing time increases and material damage risk increases
Solution Approach 1:
The patent applies partial action by reducing the marking volume to a target level rather than complete removal. The etching process stops when the marking volume reaches a predetermined target volume that is sufficient to avoid optical errors during lithography while minimizing processing time and material damage risk.
Solution Approach 2:
The patent changes the parameter from complete removal (100% volume reduction) to partial reduction (to a specific target volume). This parameter change optimizes the balance between optical quality and processing efficiency by identifying that complete removal is not necessary for avoiding optical errors.
2Manufacturing precision
If complete removal of markings is performed to avoid optical errors, then optical quality is improved, but material damage risk increases
Solution Approach 1:
The patent applies partial action by performing partial etching to reduce marking volume to a target level rather than complete removal. This prevents over-etching that could damage the lithography object while still achieving sufficient volume reduction to avoid optical errors.
Solution Approach 2:
The patent uses preliminary anti-action by setting a target volume threshold before material damage can occur. The etching process is controlled to stop at this predetermined volume, preventing the harmful effect of over-etching on the lithography object.
3Manufacturing precision
If complete removal of markings is performed, then optical errors are avoided, but etching gas consumption increases
Solution Approach 1:
The patent applies partial action by reducing marking volume to a target level rather than complete removal. This significantly reduces etching gas consumption while still achieving the necessary volume reduction to avoid optical errors during lithography.
4Loss of time
If marking volume is reduced to a target level, then processing time is reduced, but some marking material remains on the object
Solution Approach 1:
The patent applies partial action by performing etching only to the extent necessary to reach the target volume, avoiding unnecessary additional etching that would increase processing time without providing additional benefit for avoiding optical errors.
Solution Approach 2:
The patent changes the parameter from complete removal (zero remaining material) to partial reduction (to a specific target volume). This parameter optimization shows that complete removal is not necessary for avoiding optical errors, and partial reduction suffices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time, minimizes the risk of material damage, and conserves etching gas, offering a more efficient and cost-effective solution for complex lithography objects by reducing the marking volume to a level where it no longer interferes with optical properties during lithography.
Implementation Method 1
using a particle beam and an etching gas to process a marking in order to reduce the volume of the marking
Data Source
AI summary
The disclosure relates to a method for processing a lithography object. The method comprises using a particle beam and an etching gas to process a marking in order to reduce the volume of the marking, the marking having been deposited on the object and remaining on the object. The invention also relates to a corresponding computer program and a corresponding device.