Lithography Process Model Tuning for Sub-Resolution Pattern Accuracy
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Solution Overview
Problem
Current lithographic processes face challenges in accurately reproducing patterns with dimensions smaller than the classical resolution limit, due to difficulties in optimizing lithographic projection apparatuses, design layouts, and patterning devices, which affects the production of integrated circuits and other devices.
Innovation Solution
A method involving a process model that simulates lithography characteristics under various conditions, determines deviations between simulated and measured characteristics, and adjusts parameters to minimize these deviations, allowing for improved pattern reproduction and process optimization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If lithographic projection apparatuses are used to print features smaller than the classical resolution limit, then the production of integrated circuits with increased functional elements is enabled, but the manufacturing precision and pattern reproduction accuracy deteriorate
Solution Approach 1:
The patent applies preliminary action by performing process model tuning before actual lithographic production. The method involves simulating lithography processes under multiple processing conditions, comparing simulated characteristics with measured characteristics, and adjusting process parameters in advance to minimize deviations. This preliminary optimization ensures that when production occurs, the patterns are reproduced accurately even at dimensions below the classical resolution limit, thus enabling high productivity without sacrificing manufacturing precision.
2Manufacturing precision
If sophisticated fine-tuning steps are applied to optimize lithographic processes, then pattern reproduction accuracy is improved, but the device complexity and process complexity increase
Solution Approach 1:
The patent implements self-service through an automated process model tuning system that performs simulations, comparisons, and parameter adjustments without extensive manual intervention. The system automatically simulates lithography processes under multiple processing conditions, compares simulated characteristics with measured characteristics, calculates deviations, and adjusts process parameters using optimization algorithms. This automation reduces the complexity burden on operators while maintaining high pattern reproduction accuracy, as the system serves itself to optimize the lithographic process.
3Manufacturing precision
If process parameters are adjusted to reproduce small patterns accurately, then manufacturing precision is improved, but the productivity and production speed may be reduced
Solution Approach 1:
The patent resolves this contradiction by performing process optimization in advance through simulation and model tuning. By pre-determining the optimal processing conditions that balance accuracy and speed, the system eliminates the need for time-consuming parameter adjustments during actual production. The pre-optimized process parameters enable high-speed production while maintaining accurate pattern reproduction, thus improving productivity without sacrificing manufacturing precision.
Data Source
AI summary
Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.