Lithography Resin Composition for Solubility and Etching Resistance
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Solution Overview
Problem
Current film forming materials for lithography face challenges in achieving high solubility in organic solvents, etching resistance, and resist pattern formability simultaneously, limiting their effectiveness in miniaturization and pattern resolution.
Innovation Solution
A resin with a specific structure, represented by certain formulas, is developed, which exhibits high solubility in organic solvents, high heat resistance, and excellent etching resistance, enabling its use in wet processes like spin coating or screen printing for forming films suitable for lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional film forming materials are used, then solubility in organic solvents is achieved, but etching resistance and resist pattern formability deteriorate
Solution Approach 1:
The patent uses a copolymer composed of a polar group-containing monomer (providing solubility) and a non-polar group-containing monomer (providing etching resistance). This composite structure allows the material to simultaneously achieve high solubility in organic solvents and excellent etching resistance, resolving the contradiction between these two properties.
Solution Approach 2:
The patent introduces different functional groups at different positions within the polymer chain - polar groups (carboxyl, hydroxyl, ether) for solubility and non-polar groups (alkyl, aryl) for etching resistance. This local differentiation of material properties within the single copolymer structure enables simultaneous optimization of both solubility and etching resistance.
2Manufacturing precision
If film thickness is reduced for miniaturization, then resolution improves, but pattern collapse occurs
Solution Approach 1:
The patent changes the chemical composition parameters of the resin by using a specific copolymer with controlled ratios of polar and non-polar monomers. This composition optimization provides the right balance between film thinness for resolution and mechanical strength to prevent collapse, enabling miniaturization without pattern failure.
Solution Approach 2:
The patent employs a single-layer resist structure instead of multi-layer configurations, using a copolymer that inherently provides both the thin film capability and structural support needed. This eliminates the need for additional underlayer films while maintaining pattern stability during miniaturization.
3Manufacturing precision
If resist film is made thinner for higher resolution, then pattern dimension control improves, but sufficient film thickness for substrate processing becomes difficult to obtain
Solution Approach 1:
The patent optimizes the molecular weight and composition of the copolymer to achieve films with thicknesses of 50-200 nm that maintain sufficient mechanical integrity. By controlling the polymer parameters (molecular weight, monomer ratio, functional group density), the film can be made thin enough for high-resolution patterning while retaining adequate thickness for substrate processing support.
4Reliability
If high etching resistance is achieved using CVD amorphous carbon, then etching selectivity improves, but process complexity and cost increase
Solution Approach 1:
The patent replaces the CVD (chemical vapour deposition) process with a wet chemical coating process using a copolymer solution. This substitution eliminates complex CVD equipment and process steps while achieving comparable or superior etching resistance through the tailored copolymer composition, significantly simplifying the manufacturing process.
Solution Approach 2:
The patent uses a solution-processable copolymer that can be applied via simple spin-coating or dip-coating methods, replacing expensive and complex CVD amorphous carbon deposition. The copolymer provides equivalent etching resistance at lower cost and with simpler, more flexible processing suitable for high-volume manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resin allows for the formation of films with excellent resist pattern formability, high heat resistance, and etching resistance, enabling finer patterns and reduced exposure amounts, while preventing film degradation during high-temperature baking.
Implementation Method 1
the resin has high solubility in an organic solvent
Implementation Method 2
high heat resistance, and excellent etching resistance, enabling its use in wet processes like spin coating or screen printing for forming films suitable for lithography
Implementation Method 3
preventing film degradation during high-temperature baking
Implementation Method 4
excellent etching resistance, enabling its use in wet processes
Data Source
AI summary
An object of the present invention is to provide a novel resin that is useful as a film forming material for lithography and the like. The problem can be solved by a resin containing a constituent unit represented by the following formula (1) or (1)′:wherein the variables in the formulas are as described in the specification.