Lithography Underlayer Film Material for Etching Resistance
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Solution Overview
Problem
Current materials for forming underlayer films in lithography lack high solvent solubility for wet processes like spin coating or screen printing while simultaneously providing high heat resistance and etching resistance.
Innovation Solution
A material comprising a compound with a specific structural formula, such as a xanthene compound, is used to form an underlayer film that is soluble in organic solvents and exhibits high heat resistance and etching resistance, enabling its application in wet processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials for underlayer films are used, then etching resistance and heat resistance are achieved, but solvent solubility for wet processes is insufficient
Solution Approach 1:
The patent employs composite materials by combining specific polymer components (polymer A containing aromatic rings with etching resistance, and polymer B providing solvent solubility) to create an underlayer film material that simultaneously achieves both high etching resistance and good solvent solubility for wet processes
Solution Approach 2:
The patent changes the chemical composition parameters of the underlayer film material by specifying precise compositional ratios (polymer A: 30-90 mass%, polymer B: 10-70 mass%) and molecular weight ranges to optimize both etching resistance and solvent solubility properties
2Manufacturing precision
If the resist film is made thinner to achieve finer patterns, then resolution improves, but the film thickness becomes insufficient for substrate processing
Solution Approach 1:
The patent divides the protective function into two separate layers: a thin resist film (50-200 nm) for achieving fine pattern resolution, and an underlayer film (5-50 nm) that provides the necessary mechanical strength and etching resistance, allowing each layer to be optimized for its specific function
Solution Approach 2:
The underlayer film acts as an intermediary between the thin resist film and the substrate, providing mechanical support and protection during substrate processing while allowing the resist film to maintain its thin profile for high-resolution patterning
Data Source
AI summary
The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.