Lithography Underlayer Resin With High Solubility and Etch Resistance
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Solution Overview
Problem
Current materials for forming underlayer films in lithography lack high solvent solubility, heat resistance, and etching resistance, making them unsuitable for wet processes like spin coating or screen printing.
Innovation Solution
A compound with a specific structure, represented by formula (1), is developed, which exhibits high heat resistance, etching resistance, and solvent solubility, allowing it to be used in wet processes and providing excellent adhesion with resist layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a quaternary ammonium salt is used as a cationic polymerization initiator, then the polymerization reaction can be initiated, but the resin composition becomes contaminated with harmful impurities that deteriorate lithographic properties
Solution Approach 1:
The patent extracts and removes the harmful quaternary ammonium salt from the polymerization initiator system. Instead of using quaternary ammonium salts, the invention employs alternative initiators such as iodine compounds or oxoammonium salts that do not introduce harmful impurities into the resin composition, thereby eliminating the contamination issue while maintaining polymerization capability.
Solution Approach 2:
The patent replaces persistent harmful quaternary ammonium salts with alternative initiators that decompose completely after serving their function. The used initiators like iodine compounds transform into harmless byproducts (such as HI that can be neutralized) and do not remain as harmful residues in the final resin composition.
2Loss of substance
If conventional purification methods are used, then some impurities can be removed, but the purification process is complex and time-consuming
Solution Approach 1:
The patent extracts harmful impurities through a simplified purification process using basic filtration and washing steps. The resin composition is purified by removing soluble impurities through dissolution in appropriate solvents followed by filtration, eliminating the need for complex multi-step purification procedures while achieving sufficient purity for lithographic applications.
Solution Approach 2:
The patent changes the physical parameters of the system during purification by adjusting solvent selection, temperature, and pH conditions to optimize impurity removal. By carefully selecting purification parameters such as solvent type and washing conditions, the process achieves effective purification with minimal steps and reduced complexity.
3Manufacturing precision
If the resin composition is not sufficiently purified, then the production process remains simple, but the lithographic properties such as resolution and contrast are insufficient
Solution Approach 1:
The patent performs preliminary purification actions during the polymerization process itself by selecting initiators and reaction conditions that minimize impurity formation from the start. By using alternative initiators that do not generate harmful byproducts and by controlling reaction conditions to favor clean polymerization, the need for extensive post-purification is reduced while ensuring sufficient purity for high-quality lithographic results.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound forms underlayer films that maintain integrity during high-temperature baking and oxygen plasma etching, while ensuring uniform application and improved embedding properties, even in complex substrate patterns.
Implementation Method 1
a cationic polymerization initiator and a cyclic carbonate monomer are polymerized
Implementation Method 2
wherein a silane-modified polyether polyol (B) having a crosslinking structure
Data Source
AI summary
A compound represented by the following formula (1). (in formula (1), each R1 independently represents a divalent group having 1 to 30 carbon atoms, each of R2 to R7 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a thiol group or a hydroxyl group, in which at least one R5 represents a hydroxyl group or a thiol group, each of m2, m3 and m6 is independently an integer of 0 to 9, each of m4 and m7 is independently an integer of 0 to 8, m5 is an integer of 1 to 9, n is an integer of 1 to 4, and each of p2 to p7 is independently an integer of 0 to 2.)