Lithography Underlayer Film Resin for Etching Resistance
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Solution Overview
Problem
Current materials for forming underlayer films in lithography lack high solvent solubility for wet processes like spin coating or screen printing while simultaneously providing high heat resistance and etching resistance.
Innovation Solution
A compound with a specific structure, represented by formula (1), is used to create a resin that can be applied in a wet process, offering high heat resistance and etching resistance for forming underlayer films in lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials are used for underlayer films, then etching resistance and heat resistance are achieved, but solvent solubility for wet processes is insufficient
Solution Approach 1:
The patent modifies the chemical structure parameters of the resin by introducing specific repeating units with hydroxyl groups at controlled ratios (5-50 mol%). This structural parameter change enables the resin to achieve both high etching resistance and improved solvent solubility, allowing it to be processed by wet coating methods while maintaining the required performance characteristics.
Solution Approach 2:
The invention creates a composite resin structure by copolymerizing different repeating units - specifically combining units with high etching resistance (such as those containing iodine atoms) with units providing solubility (containing hydroxyl groups). This composite approach allows the material to simultaneously exhibit both high etching resistance and good solvent solubility for wet processes.
2Manufacturing precision
If the resist film is made thinner to achieve finer patterns, then resolution improves, but the film thickness becomes insufficient for processing
Solution Approach 1:
The patent divides the protective function into two separate layers: a thin resist film for pattern formation and a thicker underlayer film for mechanical support and processing. This segmentation allows the resist film to be made thin enough for high-resolution patterning while the underlayer provides sufficient thickness to maintain substrate integrity during processing.
Solution Approach 2:
The underlayer film acts as an intermediary between the thin resist film and the substrate. It provides the necessary mechanical support and processing capability that the thin resist film alone cannot provide, enabling the resist to be made thinner for better resolution while maintaining adequate film strength through the underlayer.
3Reliability
If a resist underlayer film is introduced to support thin resist films, then processing capability improves, but process complexity increases
Solution Approach 1:
The patent optimizes the molecular weight and composition parameters of the resin to achieve high solubility in common solvents. This allows the underlayer film to be applied using simple wet coating methods (spin coating or screen printing) rather than complex vacuum deposition techniques, thereby improving processing capability while minimizing the increase in process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound enables the formation of underlayer films that are excellent in heat resistance and etching resistance, suitable for high-temperature baking and oxygen plasma etching, with improved embedding properties and adhesiveness to resist layers.
Implementation Method 1
a composition for forming an underlayer film for lithography, which contains a naphthalene formaldehyde polymer including a specified constituent unit, and an organic solvent
Implementation Method 2
The compound enables the formation of underlayer films that are excellent in heat resistance and etching resistance, suitable for high-temperature baking
Implementation Method 3
excellent in heat resistance and etching resistance, suitable for high-temperature baking and oxygen plasma etching
Data Source
AI summary
The present invention provides a compound represented by following formula (1),wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and/or at least one R5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.