High-Frequency Amplifier Bypass Switching for Low-Noise SOI LNAs

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Solution Overview

Problem

Current high-frequency low-noise amplifier (LNA) technologies face challenges in efficiently switching between amplification and bypass modes without degrading electrical characteristics, particularly in integrating both functions on a single silicon on insulator (SOI) substrate while maintaining low noise and power loss.

Innovation Solution

A high-frequency amplifier circuit design incorporating a source-grounded transistor, a gate-grounded transistor, inductors, and a bypass switching circuit with cascode-connected transistors, allowing seamless switching between amplification and bypass modes by controlling the bypass path using a T-type switch configuration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a high-frequency LNA is designed with both amplification and bypass modes on a single SOI substrate, then integration is improved and manufacturing cost is reduced, but switching between modes degrades electrical characteristics such as noise figure and gain

Engineering Contradiction:
ImproveintegrationVSAvoidelectrical characteristics
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The LNA circuit is divided into two independent signal paths: an amplification path with transistors for signal amplification, and a bypass path that directly connects input to output. A switching circuit selectively connects either path based on operational mode, allowing the circuit to function as either an amplifier or a passive conduit without interference between modes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The circuit employs dynamic switching between amplification and bypass modes using control signals that activate different transistor states. The switching circuit responds to input signal conditions (such as signal strength or presence) to automatically transition between modes, optimizing performance for each operational scenario.

Inventive Principle:
Principle #15Dynamics

2Power

If amplification mode is activated to improve signal strength, then gain is increased, but noise figure deteriorates

Engineering Contradiction:
ImprovegainVSAvoidnoise figure
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The circuit dynamically switches between amplification and bypass modes based on input signal conditions. When the input signal is strong or presence is detected, the bypass mode is activated to avoid the noise figure degradation inherent in active amplification, while maintaining signal transmission. This dynamic adaptation allows the system to optimize the trade-off between gain and noise figure based on real-time conditions.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11336239B2High-frequency amplifier circuit
Publication Date: 2022.05.17 KK TOSHIBA
  • US11336239B2 patent drawing
  • US11336239B2 patent drawing
  • US11336239B2 patent drawing

AI summary

A high-frequency amplifier circuit has a source-grounded first transistor that amplifies a high-frequency input signal, a gate-grounded second transistor that further amplifies the amplified signal, a first inductor and a first reference voltage node, a second inductor connected between a first node and a second reference voltage node, a third transistor that is connected between the first node and a drain of the second transistor, is turned on at the time of selecting the first mode to transmit the amplified signal to the first node, and is turned off when selecting a second mode to disconnect the first node from the drain of the second transistor, a bypass path that bypasses the high-frequency input signal from an input node of the high-frequency input signal to the first node at the time of selecting the second mode, and a bypass switching circuit that is connected on the bypass path.