Load Lock Chamber Halogen Residue Removal
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Solution Overview
Problem
Current methods for removing halogen-containing residues from semiconductor substrates after plasma etching are inefficient, leading to contamination and corrosion of processing systems and factory interfaces, and result in increased manufacturing costs due to the need for additional processing steps and dedicated chambers.
Innovation Solution
A method and apparatus that utilize a load lock chamber within a processing system to perform a thermal treatment process, converting halogen-containing residues into non-volatile compounds that can be pumped out, thereby removing residues without extending the overall process cycle time and preventing contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dedicated remote plasma reactor is used to remove halogen-containing residues, then the residues are converted to non-corrosive volatile compounds, but the tool expense increases and manufacturing productivity decreases due to additional processing steps
Solution Approach 1:
The patent combines the residue removal function with the existing load lock chamber, which is already part of the substrate transfer sequence. By integrating a heating element and gas delivery system into the load lock chamber, the patent eliminates the need for a separate remote plasma reactor while achieving the same residue removal effect. This merging of functions directly resolves the contradiction by maintaining reliability without sacrificing productivity.
Solution Approach 2:
The load lock chamber is transformed from a single-function chamber (only for pressure equalization and substrate transfer) to a multi-functional chamber that also performs thermal treatment and residue removal. By making the load lock chamber universal, the patent avoids adding dedicated equipment while maintaining the desired residue removal capability, thus preserving manufacturing throughput.
2Object-affected harmful factors
If a dedicated remote plasma reactor is used to remove halogen-containing residues, then corrosion of processing systems is prevented, but device complexity and manufacturing cost increase due to additional chambers
Solution Approach 1:
The patent merges the corrosion prevention function into the existing load lock chamber by adding a heating element and gas delivery system. This eliminates the need for a separate remote plasma reactor, thereby reducing device complexity while still preventing system corrosion through effective halogen residue removal.
Solution Approach 2:
The patent extracts the residue removal function from the main processing chamber and performs it in the load lock chamber during the substrate transfer sequence. This extraction allows the main processing chamber to remain simple while still achieving corrosion prevention through the integrated load lock treatment.
3Productivity
If thermal treatment is performed in the load lock chamber to remove halogen residues, then productivity is maintained, but the substrate must be heated to high temperatures
Solution Approach 1:
The patent applies periodic thermal treatment to the substrate in the load lock chamber during the transfer sequence. The substrate is heated to high temperature only during the brief period when it is in the load lock chamber, rather than maintaining high temperature throughout the entire processing sequence. This periodic action allows productivity to be maintained while managing the thermal load on the substrate.
Solution Approach 2:
The patent performs thermal treatment as a preliminary action during the substrate transfer sequence, before the substrate enters the main processing chamber. By removing halogen residues beforehand, the substrate can be processed in the main chamber without risk of corrosion, and the high temperature is applied only briefly during transfer, minimizing overall thermal exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes halogen-containing residues, preventing substrate and system contamination, while maintaining high productivity and throughput by integrating the residue removal process into the substrate transfer sequence within the load lock chamber.
Implementation Method 1
a thermal treatment process performed in a load lock chamber integrated within a processing system. The load lock chamber heats the etched substrate and converts the halogen-containing residues into non-volatile compounds
Implementation Method 2
The pump passage is coupled to a point-of-use pump that is configured to pump the load lock chamber
Implementation Method 3
Plasma etching is commonly used in the fabrication of transistors and other electronic devices. During plasma etch processes used to form transistor structures, one or more layers of a film stack are typically exposed to etchants comprising at least one halogen-containing gas
Data Source
AI summary
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.