Load Lock Radical Treatment for Low-Temperature ALD TiN Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, the low-temperature atomic layer deposition of titanium nitride (ALD TiN) process is hindered by Cl components in the thin film, leading to deteriorated electrical characteristics, and existing solutions like increasing process temperature or plasma treatment within the process chamber lengthen process time and reduce productivity.
Innovation Solution
A substrate treatment apparatus and method that includes a load lock radical supply system to generate and supply radicals, such as hydrogen radicals, into the load lock chamber to remove Cl components from the wafer surface, using a radical generator and supply line, and employing a controller to manage the radical supply and chamber states for efficient film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If process temperature is increased to remove Cl components, then electrical characteristics improve, but process time increases and productivity decreases
Solution Approach 1:
The invention changes the parameter from temperature to chemical composition by introducing hydrogen radicals into the load lock chamber. Instead of increasing process temperature to remove Cl components, the patent uses hydrogen radicals that react with Cl to form HCl, which is then pumped away. This parameter change resolves the contradiction by achieving Cl removal without temperature increase, maintaining both electrical characteristics and productivity
Solution Approach 2:
The invention introduces hydrogen radicals as an intermediary substance to facilitate Cl component removal. The hydrogen radicals act as a mediator that reacts with Cl components on the wafer surface, converting them into volatile HCl that can be easily removed by the pumping system. This intermediary approach avoids the need for high temperature or prolonged plasma treatment, thereby maintaining productivity while improving electrical characteristics
2Reliability
If plasma treatment is performed within the process chamber, then Cl components are removed, but process time lengthens and productivity reduces
Solution Approach 1:
The invention segments the treatment process by separating Cl component removal from the main deposition process. Instead of performing plasma treatment within the process chamber during deposition, the patent removes Cl components in the load lock chamber before the wafer enters the deposition chamber. This segmentation allows Cl removal to occur independently and efficiently, reducing overall process time while maintaining electrical characteristics
Solution Approach 2:
The invention performs preliminary action by removing Cl components in the load lock chamber before the wafer enters the deposition chamber. This preliminary treatment ensures that Cl components are eliminated ahead of time, preventing contamination during the deposition process. By performing this action preliminarily, the patent avoids extending the main deposition process time, thereby maintaining productivity
3Productivity
If process is simplified, then productivity increases, but film quality may deteriorate
Solution Approach 1:
The invention uses hydrogen radicals as an intermediary to achieve effective Cl removal without complicating the process. The hydrogen radicals react selectively with Cl components, and the resulting HCl is efficiently pumped away. This intermediary mechanism ensures high film quality by thoroughly removing Cl components while keeping the process simple and integrated into the existing load lock chamber, thereby maintaining productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the quality of the TiN thin film by removing Cl components, enhancing electrical characteristics without increasing process time, thus simplifying the process and increasing productivity.
Implementation Method 1
a radical generator configured to generate the radicals from a gas including hydrogen
Implementation Method 2
supplying radicals into the load lock chamber... removing a Cl component in a film generated on a surface of the wafer based on supplying the radicals into the load lock chamber
Data Source
AI summary
A substrate treatment apparatus including a process chamber configured to process a wafer therein; a load lock chamber configured to accommodate the wafer and configured to switch between an atmospheric state and a vacuum state; and a load lock radical supply configured to supply radicals into the load lock chamber. The substrate treatment apparatus further including: a front opening unified pod (FOUP) configured to accommodate the wafer; an equipment front end module (EFEM) provided between the FOUP and the load lock chamber, the EFEM configured to transfer the wafer to the load lock chamber in the atmospheric state; and a transfer chamber provided between the process chamber and the load lock chamber, the transfer chamber configured to transfer the wafer to the process chamber in the vacuum state