Load Switch Gate Drive for Short-Circuit Negative Voltage Control

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Solution Overview

Problem

During a short circuit event, load switch integrated circuits experience a negative voltage at their output terminal, which can lead to circuit malfunctions or failures due to excessive current flowing through ESD diodes, as the large current can exceed the diode's threshold voltage, causing damage.

Innovation Solution

A gate drive circuit is configured to gradually reduce the gate voltage of the transistor during a short circuit event, clamping it to a predetermined voltage level (approximately two times the diode's voltage drop) and then discharging it to zero using a current source, thereby minimizing the negative voltage at the output terminal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the gate voltage is quickly reduced to turn off the transistor during a short circuit event, then the response speed is improved, but the negative voltage at the output terminal increases causing circuit damage

Engineering Contradiction:
Improveresponse speedVSAvoidnegative voltage
Core Design Contradiction:
SpeedVSObject-affected harmful factors

Solution Approach 1:

The gate drive circuit dynamically adjusts the gate voltage reduction rate based on the short circuit detection signal. When a short circuit is detected, the circuit transitions from normal fast switching mode to a controlled voltage reduction mode, where the gate voltage is gradually reduced at a controlled rate to minimize negative voltage while still providing protection.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the gate voltage parameter from a binary state (fully on/off) to a controlled continuous reduction process. By adjusting the gate voltage reduction rate and using clamping circuits to limit the minimum gate voltage, the system optimizes the trade-off between switching speed and negative voltage suppression, preventing ESD diode damage.

Inventive Principle:
Principle #35Parameter changes

2Object-affected harmful factors

If the gate voltage is gradually reduced during a short circuit event, then the negative voltage is minimized, but the response time increases

Engineering Contradiction:
Improvenegative voltageVSAvoidresponse time
Core Design Contradiction:
Object-affected harmful factorsVSLoss of time

Solution Approach 1:

The gate drive circuit prepares for short circuit events by having pre-configured voltage reduction pathways and clamping circuits ready. When a short circuit is detected, the gradual voltage reduction begins immediately without needing to reconfigure the circuit, thus minimizing the time penalty while still achieving negative voltage suppression.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention skips the intermediate stages of gradual voltage reduction by using a detection signal that triggers immediate action. The clamping circuit rapidly establishes the minimum gate voltage threshold, and the voltage reduction process is accelerated through optimized circuit paths, reducing the overall response time while maintaining negative voltage control.

Inventive Principle:
Principle #21Skipping (Rushing through)

Data Source

PatentUS11984877B2Load switch apparatus and control method
Publication Date: 2024.05.14 XI AN M3 SEMICONDUCTOR INC
  • US11984877B2 patent drawing
  • US11984877B2 patent drawing
  • US11984877B2 patent drawing

AI summary

An apparatus includes a transistor coupled to a load through an output terminal of a load switch IC, a gate drive circuit connected to a gate of the transistor, wherein the gate drive circuit is configured such that in a short circuit event, a voltage on the gate of the transistor is gradually reduced, and wherein as a result of reducing the voltage on the gate of the transistor gradually, a negative voltage occurring at the output terminal of the load switch IC is minimized.