Local Organic Interconnect Packaging for Dense PoP Routing
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and small footprint packaging due to limitations in existing packaging techniques, particularly in the formation of reliable and high-speed interconnects within Package-on-Package (PoP) systems, which affect performance and reliability.
Innovation Solution
The use of local organic interconnects with fine-pitch redistribution layers and conductive vias, formed through processes like damascene or dual damascene, to create high-density electrical routing, reducing signal loss and improving connectivity between semiconductor devices in a PoP arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional packaging techniques are used, then manufacturing simplicity is maintained, but integration density and component density are limited
Solution Approach 1:
The patent implements Package-on-Package (PoP) technology where a top semiconductor package is stacked on top of a bottom semiconductor package, creating a nested three-dimensional structure that dramatically increases integration density and component density within a compact footprint
2Quantity of substance
If interconnect density is increased, then connectivity is improved, but signal loss and resistance increase
Solution Approach 1:
The patent employs fine-pitch redistribution layers with precisely controlled trace widths and spacing parameters, along with optimized via dimensions and metallization thickness, to achieve high interconnect density while maintaining low signal resistance and excellent electrical performance through parameter optimization
3Area of stationary object
If package size is reduced, then footprint is minimized, but manufacturing precision requirements increase
Solution Approach 1:
The patent incorporates alignment marks, registration features, and precision positioning structures during the packaging process to pre-establish accurate alignment between stacked packages, thereby achieving compact footprints while maintaining manufacturing feasibility through preliminary alignment preparation
Data Source
AI summary
Semiconductor devices and methods of manufacture are described herein. The methods include forming a local organic interconnect (LOI) by forming a stack of conductive traces embedded in a passivation material, forming first and second local contacts over the passivation material, the second local contact being electrically coupled to the first local contact by a first conductive trace of the stack. The methods further include forming a backside redistribution layer (RDL) and a front side RDL on opposite sides of the LOI with TMVs electrically coupling the backside and front side RDLs to one another. First and second external contacts are formed over the backside RDL for mounting of semiconductor devices, the first and second external contacts being electrically connected to one another by the LOI. An interconnect structure is attached to the front side RDL for further routing. External connectors electrically coupled to the external contacts at the backside RDL.