Local Sense Amplifier for Semiconductor Memory Data Transmission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing physical area and length of data transmission paths in semiconductor memory devices limit the operating frequency of sense amplifiers, necessitating additional driving circuits to improve transmission speed.
Innovation Solution
A semiconductor memory device with a local sense amplifier comprising first and second read circuits and a write circuit, which amplifies data from bit lines to global data lines, enhancing the driving ability and reducing the need for additional circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the physical area and length of data transmission path increase with more memory cells, then the memory device capacity increases, but the sense amplifier driving ability decreases and operating frequency is limited
Solution Approach 1:
The patent divides the data transmission path into multiple segments by introducing local sense amplifiers between the bit line sense amplifier and the global data line. Each local sense amplifier serves a specific segment, reducing the effective transmission distance for each amplifier and maintaining signal integrity across the entire memory array.
Solution Approach 2:
The local sense amplifier acts as an intermediary component between the bit line sense amplifier and the global data line. It receives weak signals from the bit line, performs local amplification, and transmits the amplified signal to the global data line, thereby bridging the gap between local memory cells and global data pathways.
2Speed
If additional driving circuits are added to improve transmission speed, then the data transmission ability improves, but the circuit area and complexity increase
Solution Approach 1:
The patent applies local quality by implementing sense amplification functionality at specific locations within the memory array rather than using a single centralized amplifier. Each local sense amplifier is strategically positioned to serve nearby memory cells, providing targeted amplification where needed and reducing the overall circuit area required.
3Area of stationary object
If the data transmission path length increases, then the memory device physical area increases, but the sense amplifier driving ability decreases due to inherent line resistance and capacitance
Solution Approach 1:
The patent segments the long data transmission path into multiple shorter paths by introducing local sense amplifiers at intermediate points. Each segment has reduced inherent line resistance and capacitance, allowing individual sense amplifiers to maintain adequate driving ability without requiring excessive power or complex circuitry.
Data Source
AI summary
A semiconductor memory device comprises a plurality of memory cells, a bit line sense amplifier, a local sense amplifier, and a sense amplifier. The memory cells are connected between a word line and a bit line pair, and the bit line sense amplifier is configured to amplify voltages of data from the bit line pair and then transmits the data to a local data line pair. The local sense amplifier is configured to amplify voltages of the data from the local data line pair and transmit the data to a global data line pair in response to first and second control signals, and the sense amplifier is configured to amplify the voltages of the data from the global data line pair and transmit the data to an input/output line pair during a read operation. The local sense amplifier comprises a first read circuit, a second read circuit, and a write circuit, and when the memory device performs the read operation, the data is transmitted from the first read circuit to the write circuit via the second read circuit.