Logic Gate Layout Without Dummy Gates for Lower Capacitance
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Solution Overview
Problem
Existing logic gates in memory devices suffer from inefficiencies due to the presence of dummy gates, which reduce the number of active gates per area and increase device size, leading to suboptimal performance and power consumption.
Innovation Solution
The implementation of logic gates with enhanced channel stress, achieved by using larger source/drain epitaxy and liner material volumes, eliminating dummy gates and active regions, and employing non-uniform gate pitches, resulting in improved area efficiency, reduced resistance, capacitance, and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If dummy gates are used in logic gates, then the structure is simplified and manufacturing is easier, but the number of active gates per area decreases and device size increases
Solution Approach 1:
The patent removes dummy gates and inactive active regions from the logic gate structure, extracting only the necessary functional elements. This eliminates wasted space while maintaining the core logic functionality, thereby reducing device area without compromising manufacturing feasibility.
Solution Approach 2:
The patent employs non-uniform gate pitches, varying the spacing between gates in different regions of the logic gate. This dimensional optimization allows tighter packing in critical areas while maintaining accessibility for manufacturing processes, thus reducing overall device area without sacrificing ease of manufacture.
2Ease of manufacture
If dummy gates are used in logic gates, then the structure is simplified, but the operational speed decreases due to increased capacitance and gate delay
Solution Approach 1:
By removing dummy gates and inactive active regions, the patent reduces the total capacitance associated with the logic gate structure. Less capacitance means faster charging and discharging times, directly improving operational speed while retaining sufficient structural simplicity for manufacturing.
Solution Approach 2:
The patent applies different gate pitch spacings in different regions, creating local optimizations where critical paths have tighter spacing for speed, while less critical areas maintain larger spacing for manufacturability. This local differentiation improves overall operational speed without uniformly complicating the structure.
3Productivity
If larger source/drain epitaxy and liner material volumes are used, then channel stress is enhanced and performance improves, but manufacturing complexity increases
Solution Approach 1:
The patent modifies physical parameters such as source/drain epitaxy volume and liner material volume to enhance channel stress. By carefully controlling these parameters within achievable ranges, the patent improves carrier mobility and logic gate performance while maintaining compatibility with traditional semiconductor manufacturing processes.
Solution Approach 2:
The enhanced source/drain epitaxy and liner material structures serve multiple functions: they provide mechanical stress for performance enhancement, maintain structural integrity during manufacturing, and facilitate proper electrical contact. This multi-functionality achieves performance improvement without proportionally increasing manufacturing complexity.
4Area of stationary object
If non-uniform gate pitches are employed, then area efficiency improves and capacitance is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the gate array into multiple regions with different pitch specifications. By segmenting the structure into zones with uniform (but different) pitch values, the patent achieves overall area efficiency while keeping local manufacturing precision requirements manageable and consistent with standard fabrication capabilities.
Data Source
AI summary
Embodiment herein relate to logic gates. An example of a logic gate includes a semiconductor material, source regions having a first width, drain regions having a second width that is different than the first width, transistor gates, and electrical contacts coupled to the source regions and the drain regions.