Logic Region Stop Layer Insulating Delamination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The etch back process used to reduce surface topology in semiconductor devices often damages the insulating material, leading to delamination and time-dependent dielectric breakdown, which can cause chip package interaction issues.
Innovation Solution
A semiconductor device is fabricated with a stop layer between the first and second insulating layers in the logic region, and the use of a polishing technique to reduce surface topology, minimizing damage to the insulating material and enhancing layer uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If an etch back process is used to reduce surface topology of the insulating material, then the surface topology is reduced, but the insulating material surface is damaged causing delamination and dielectric breakdown
Solution Approach 1:
A stop layer is introduced as an intermediary between the first insulating layer and the second insulating layer. This stop layer serves as a mediator that protects the first insulating layer from direct damage during the etch back process while still allowing the process to reduce surface topology. The stop layer absorbs the harmful effects of the etch back process, preventing delamination of the first insulating layer.
Solution Approach 2:
The stop layer is deposited beforehand to cushion or protect the first insulating layer from the damaging effects of the subsequent etch back process. This pre-positioned protective layer prevents direct contact between the etch back process and the first insulating layer, thereby preventing delamination and dielectric breakdown before they can occur.
2Shape
If a reverse mask is used for etch back process, then surface topology can be reduced, but polymer residue remains on the insulating material surface
Solution Approach 1:
The stop layer acts as an intermediary that prevents polymer residue from the reverse mask from contaminating the first insulating layer surface. By placing the stop layer between the first insulating layer and the second insulating layer, any polymer residue generated during the etch back process remains on or near the stop layer rather than on the first insulating layer, eliminating the harmful contamination effect.
3Device complexity
If the first insulating layer and second insulating layer are deposited directly without an intermediate layer, then the structure is simpler, but delamination occurs between the layers
Solution Approach 1:
The stop layer serves as an intermediary interface between the first insulating layer and the second insulating layer. This intermediate layer prevents direct contact between the two insulating layers that would otherwise lead to delamination. The stop layer creates a stable interface that maintains reliability while allowing the overall structure to remain relatively simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the likelihood of delamination between insulating layers, improves the reliability of the semiconductor device, and allows for easier achievement of specific thicknesses, thereby enhancing the device's performance and longevity.
Implementation Method 1
a polishing technique to reduce surface topology
Data Source
AI summary
A semiconductor device includes a first insulating layer; a second insulating layer arranged over the first insulating layer; a memory structure arranged within a memory region and including a resistance changing memory element within the first insulating layer; and a logic structure arranged within a logic region. In the memory region, the first insulating layer may contact the second insulating layer and in the logic region, the semiconductor device may further include a stop layer arranged between the first insulating layer and the second insulating layer.