Loop-Shaped ICP Antenna Layout for Low-Voltage Plasma Transfer
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Solution Overview
Problem
Inductively coupled plasma antennas experience power transfer issues and increased voltage leading to particle contamination on semiconductor wafers due to the use of matchers and high frequencies, which affect yield and production costs.
Innovation Solution
An inductively coupled plasma antenna design with loop-shaped coil portions and a shielding mechanism that reduces antenna inductance and voltage by opposing current directions and using a shielding portion to cancel magnetic fields, eliminating the need for a matcher.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a matcher is connected between the high-frequency power source and the antenna coil to facilitate power transfer, then power transfer is improved, but power loss increases and power transfer speed reduces
Solution Approach 1:
The patent removes the matcher component from the system entirely. By directly connecting the high-frequency power source to the antenna coil without an intermediary matcher, the system eliminates the power loss and speed reduction caused by the matcher while maintaining effective power transfer for plasma generation.
2Productivity
If the frequency of the antenna is increased to induce inductively coupled plasma, then plasma generation is improved, but antenna voltage increases causing particle contamination on the wafer
Solution Approach 1:
The patent uses a shielding plate positioned between the antenna coil and the wafer to convert the harmful effect of high-frequency electromagnetic fields (which cause particle contamination) into a beneficial configuration. The shielding plate blocks ions and particles from reaching the wafer while allowing the high-frequency operation needed for plasma generation to continue.
3Productivity
If high-frequency power is applied to increase plasma generation, then productivity is improved, but antenna inductance increases leading to higher voltage and particle contamination
Solution Approach 1:
The patent introduces a shielding plate as an intermediary component between the antenna system and the wafer. This shielding plate mediates the interaction by blocking the harmful effects of high inductance and voltage (particle generation) while allowing the beneficial high-frequency plasma generation to proceed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces power loss, increases power transfer speed, and minimizes particle contamination on wafers, thereby improving semiconductor production yield and reducing costs.
Implementation Method 1
The inductively coupled plasma method forms a magnetic field that changes temporally in a direction perpendicular to the plane formed by the antenna coil as radio frequency (RF) power is provided to the antenna coil, and thus, electrons in the semiconductor wafer processing chamber are heated to generate a plasma.
Implementation Method 2
respective high-frequency currents flow in opposite directions in adjacent and facing lines of the first loop-shaped coil portion and the second loop-shaped coil portion
Data Source
AI summary
An inductively coupled plasma antenna, which is configured for use in a semiconductor wafer processing apparatus, includes: a plurality of loop-shaped coil portions extending adjacent to each other in sequence, said plurality of loop-shaped coil portions including at least a first loop-shaped coil portion and a second loop-shaped coil portion, and a high-frequency power source configured to supply high-frequency current to each of the plurality of loop-shaped coil portions, such that respective high-frequency currents flow in opposite directions in adjacent and facing lines of the first loop-shaped coil portion and the second loop-shaped coil portion.