Loop-Type Magnetic Track for High-Density Memory
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Solution Overview
Problem
Existing magnetic memory devices face challenges in achieving high-speed read/write operations and low operating voltages while maintaining reliability and data density.
Innovation Solution
A magnetic memory device with a loop-type magnetic track and conductive lines alternately disposed on and below the track, generating spin-orbit torque to move magnetic domains in a controlled manner, thereby enhancing data density and preventing spin-orbit torque gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If magnetic memory devices use traditional linear magnetic tracks, then the structure is simple, but the data density is limited due to large empty regions at the ends of the track
Solution Approach 1:
The patent transforms the linear magnetic track into a loop-type magnetic track with curved geometry. This curvature eliminates the empty regions at the ends of linear tracks, allowing magnetic domains to continuously circulate along the closed loop path, thereby increasing data density without proportionally increasing structural complexity.
2Reliability
If conductive lines are placed only on one surface of the magnetic track, then the device structure is simpler, but spin-orbit torque gaps occur causing malfunctions
Solution Approach 1:
The patent transitions from a single-surface conductive line configuration to a three-dimensional alternating configuration where conductive lines are placed on both top and bottom surfaces of the magnetic track in alternating pattern. This dimensional change ensures continuous spin-orbit torque generation along the entire loop track, preventing torque gaps and improving operational reliability.
3Speed
If high operating voltages are used to achieve fast read/write operations, then the speed is improved, but power consumption increases
Solution Approach 1:
The patent utilizes spin-orbit torque generated by heavy metal conductive lines to manipulate magnetic domains, enabling high-speed read/write operations at lower operating voltages. The spin-orbit torque mechanism changes the energy efficiency parameter by providing a more effective means of magnetic domain manipulation compared to traditional methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed, reliable data storage with increased data density by minimizing the empty region in the magnetic track and preventing malfunctions due to spin-orbit torque gaps.
Implementation Method 1
Each of the first and second conductive lines may be configured to generate spin-orbit torque caused by current that flows in each of the first and second conductive lines. The spin-orbit torque may cause magnetic domains in the magnetic track to move in a clockwise direction or in the counterclockwise direction.
Data Source
AI summary
A magnetic memory device includes a loop-type magnetic track having a first part and a second part that are arranged in a counterclockwise direction, a first conductive line on a top surface of the first part, and a second conductive line on a bottom surface of the second part. The magnetic track includes a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked. Each of the first and second conductive lines includes heavy metal. Each of the first and second conductive lines is configured to generate spin-orbit torque caused by current that flows therein. The spin-orbit torque causes magnetic domains in the magnetic track to move in a clockwise direction or in the counterclockwise direction.