Imprint Resist Patterning with Loop Templates for Fine Line-Spaces
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Solution Overview
Problem
Existing methods face challenges in directly forming fine line-and-space patterns in imprint lithography due to the complexity of photolithography processes, particularly in achieving precise nano-scale patterns without requiring multiple exposure steps.
Innovation Solution
A pattern formation method utilizing a side wall transfer process involving a mold template with a loop structure, where a resist film is selectively irradiated and etched to create a line-and-space pattern, reducing the need for additional masks and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used to form fine line-and-space patterns, then pattern precision can be achieved, but the process complexity increases due to multiple exposure steps and mask requirements
Solution Approach 1:
The pattern formation process is segmented into distinct functional components: the mold template with loop structures serves as a reusable master pattern, while the resist film receives selective irradiation to create the final line-and-space pattern. This segmentation allows the complex photolithography process to be broken down into simpler, more manageable steps that reduce overall process complexity while maintaining precision
Solution Approach 2:
The mold template with loop structures is prepared in advance as a pre-formed master pattern. This preliminary action eliminates the need for multiple exposure steps during the actual pattern formation, as the template already contains the desired pattern geometry. The resist film is then selectively irradiated based on this pre-established template, significantly reducing process complexity while maintaining manufacturing precision
2Manufacturing precision
If multiple masks are used in photolithography to achieve fine patterns, then pattern precision improves, but manufacturing time and process steps increase
Solution Approach 1:
The mold template with loop structures serves multiple functions: it defines the pattern geometry, acts as a mask during selective irradiation, and can be reused for multiple pattern formation cycles. This multi-functionality eliminates the need for multiple separate masks, reducing both manufacturing time and process steps while maintaining the precision required for fine line-and-space patterns
Solution Approach 2:
The final line-and-space pattern is created as a copy or impression from the master mold template with loop structures. Instead of using multiple masks to progressively build the pattern, the resist film directly receives the pattern information from the single reusable template through selective irradiation. This copying approach significantly reduces manufacturing time while preserving pattern precision
3Ease of manufacture
If a simple resist coating process is used, then ease of manufacture improves, but etch resistance decreases leading to poor pattern definition
Solution Approach 1:
The resist film exhibits different properties in different regions: the irradiated portions develop high etch resistance to maintain pattern definition during etching, while non-irradiated portions remain susceptible to removal. This local differentiation of quality within the resist film allows the simple coating process to achieve both ease of manufacture and sufficient etch resistance where needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the efficient formation of fine line-and-space patterns with improved etch resistance and reduced process complexity, enhancing yield and eliminating the need for multiple mask formation and removal steps in template manufacturing.
Implementation Method 1
the imprint resist film is selectively irradiated in a portion between the first loop section and the second loop section
Data Source
AI summary
According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film.