Looped Wiring End Structure for Dense Semiconductor Interconnects

Solution Overview

Problem

The trailing phenomenon in semiconductor storage device wiring layers leads to narrower wiring intervals, increasing the risk of breakdown voltage reduction and short circuits due to wider lower parts of wirings compared to upper parts, especially at end points with low wiring density and irregularity.

Innovation Solution

A wiring structure where the end of the second wiring is formed into one or more loops, increasing wiring density and regularity at the end points, preventing the trailing phenomenon and reducing the likelihood of breakdown voltage reduction and short circuits by maintaining a consistent width and minimizing parasitic capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If wiring intervals are narrowed to increase device density, then productivity is improved, but reliability deteriorates due to breakdown voltage reduction and short circuit risk

Engineering Contradiction:

Improvedevice densityVSAvoidbreakdown voltage

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent applies local quality by forming loops specifically at wiring end points where the trailing phenomenon occurs, rather than modifying the entire wiring structure. This localized modification increases wiring density and regularity only where needed, maintaining consistent width at critical endpoints while preserving the narrowed wiring intervals in other areas, thus improving device density without compromising reliability

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent uses curvature by forming loops (curved structures) at the end points of wirings. This curvature transforms the sharp ends into rounded loop structures, which prevents the trailing phenomenon caused by irregular endpoint geometry. The looped structure maintains consistent wiring width and density, preventing breakdown voltage reduction while allowing overall wiring interval narrowing for higher device density

Inventive Principle:

Principle #14Spheroidality (Curvature)

2Area of stationary object

If wiring intervals are narrowed, then area is reduced, but object-generated harmful factors increase due to trailing phenomenon and short circuits

Engineering Contradiction:

Improvewiring layer areaVSAvoidtrailing phenomenon

Core Design Contradiction:

Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by forming loops specifically at wiring end points where the trailing phenomenon occurs, rather than modifying the entire wiring structure. This localized modification increases wiring density and regularity only where needed, maintaining consistent width at critical endpoints while preserving the narrowed wiring intervals in other areas, thus improving device density without compromising reliability

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent converts the harmful trailing phenomenon into a benefit by intentionally forming loops at endpoints. The loops transform the irregular endpoint geometry that causes trailing into a controlled structure that actually prevents trailing. This converts the potential harm of modified endpoint geometry into the benefit of reduced trailing phenomenon and improved wiring regularity, allowing for narrower wiring intervals without increasing short circuit risk

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If wiring end points are modified to prevent trailing phenomenon, then reliability is improved, but device complexity increases

Engineering Contradiction:

Improveshort circuit preventionVSAvoidwiring structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by forming loops specifically at wiring end points where the trailing phenomenon occurs, rather than modifying the entire wiring structure. This localized modification increases wiring density and regularity only where needed, maintaining consistent width at critical endpoints while preserving the narrowed wiring intervals in other areas, thus improving device density without compromising reliability

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent applies segmentation by dividing the wiring structure into two distinct parts: regular linear sections and looped endpoint sections. This segmentation allows the complex looped structure to be applied only where needed at endpoints, while the majority of the wiring maintains its simple linear form. The modular nature of this segmentation reduces overall device complexity compared to a completely modified wiring structure

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS12074108B2Semiconductor device

Publication Date: 2024.08.27 KIOXIA CORP

AI summary

A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction crossing the first direction and having an end that faces the first wiring and is a predetermined distance away from the first wiring. The predetermined distance is approximately equal to a width of the second wiring, and the end of the second wiring is formed into one or more loops.