Low-Abrasive CMP Slurry for Faster, Low-Defect Metal Planarization
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) processes for semiconductor devices face challenges in achieving planarity and efficiency, particularly in reducing the time required for polishing metal layers, and often rely on abrasive particles that can cause defects and contamination.
Innovation Solution
A CMP slurry composition incorporating an organic booster such as an amino acid, a pH adjuster, and inorganic abrasive particles less than 0.1 weight % is used, with deionized water as the primary component, allowing for controlled etching and planarization of metal layers without the need for additional abrasives, thereby reducing defects and extending polishing pad lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP slurry with high inorganic abrasive content is used, then polishing speed is improved, but manufacturing precision deteriorates due to scratches and defects
Solution Approach 1:
The patent changes the chemical composition parameters of the slurry by introducing specific organic boosters (amino acids like glycine, L-alanine, L-valine) and pH adjusters to replace inorganic abrasives. This chemical parameter change enables effective polishing without the mechanical scratching caused by traditional abrasive particles, thus improving surface quality while maintaining polishing speed.
Solution Approach 2:
The patent replaces the mechanical abrasion mechanism (inorganic abrasive particles) with a chemical etching mechanism (organic booster + pH adjuster). The organic booster chemically etches the metal layer to achieve planarization without the mechanical contact and scratching that would otherwise be necessary, thereby improving manufacturing precision while maintaining productivity.
2Productivity
If inorganic abrasive particles are used for CMP, then polishing efficiency is improved, but reliability deteriorates due to defects and contamination
Solution Approach 1:
The patent extracts and removes inorganic abrasive particles from the slurry composition entirely, replacing them with organic boosters and pH adjusters. This extraction eliminates the source of defects and contamination that inorganic abrasives cause, improving reliability while maintaining polishing efficiency through the chemical etching action of the organic components.
Solution Approach 2:
The patent creates a composite slurry system combining organic boosters (amino acids), pH adjusters, and deionized water to achieve the polishing function previously provided by inorganic abrasives. This composite material approach enables effective metal layer planarization without introducing the defects associated with traditional abrasive-based slurries.
3Manufacturing precision
If polishing time is extended to improve planarity, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent applies preliminary chemical etching action through the organic booster and pH adjuster that works continuously during the polishing process. This preliminary chemical action softens and prepares the metal layer surface before mechanical polishing, enabling faster achievement of the desired planarity and reducing the overall polishing time required.
Solution Approach 2:
The patent ensures continuous useful action by maintaining a slurry composition that provides ongoing chemical etching throughout the polishing process. The organic booster and pH adjuster work continuously to etch the metal layer, ensuring that every moment of the polishing process contributes to planarization, thereby improving efficiency and reducing total processing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP slurry composition effectively improves the planarity of metal layers, reduces polishing time, and minimizes the risk of defects by using a hydrophobic amino acid-based organic booster, enabling precise control over etching rates and recess depths, thus enhancing the manufacturing efficiency of semiconductor devices.
Implementation Method 1
A CMP slurry composition includes an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition
Implementation Method 2
a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition
Implementation Method 3
a material constituting a remaining part of the CMP slurry composition is deionized water (DIW)
Data Source
AI summary
Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).