Low-Dimensional Fin Transistors for Short-Channel Control
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Solution Overview
Problem
Current semiconductor device fabrication methods for transistors face challenges in achieving high carrier mobility and reducing the short-channel effect, particularly in forming transistors with low-dimensional channels that are compatible with existing integrated circuit processes.
Innovation Solution
The formation of transistors using low-dimensional materials such as carbon nanotube networks, aligned carbon nanotubes, and Transition Metal Dichalcogenides (TMDs) as channel materials, stacked and patterned into a protruding fin structure, with insulators separating these layers to create FinFET or Gate-All-Around transistors, allowing for high carrier mobility and reduced channel thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor fabrication methods are used, then manufacturing compatibility is maintained, but carrier mobility is insufficient and short-channel effect increases
Solution Approach 1:
The patent changes the dimensional parameter of the channel material from three-dimensional bulk semiconductor to two-dimensional low-dimensional materials (such as TMDs and carbon nanotubes). This dimensional reduction enables higher carrier mobility while maintaining compatibility with existing semiconductor fabrication processes through established deposition and patterning techniques.
Solution Approach 2:
The patent employs composite material structures by stacking multiple layers of low-dimensional channel materials with insulating materials. This composite approach allows the channel region to achieve superior electrical properties while the overall structure remains compatible with conventional manufacturing processes that handle layered materials.
2Reliability
If channel thickness is reduced to mitigate short-channel effect, then short-channel effect is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes atomically thin two-dimensional materials such as transition metal dichalcogenides (TMDs) as channel materials. These materials naturally provide the required thin channel thickness at the atomic level, eliminating the need for precise thickness control during manufacturing while effectively mitigating short-channel effects.
Solution Approach 2:
The patent employs two-dimensional material films with atomic-scale thickness as the channel structure. These ultra-thin films inherently provide the necessary channel thickness reduction to suppress short-channel effects while their two-dimensional nature simplifies the manufacturing precision requirements compared to controlling thin three-dimensional structures.
3Reliability
If low-dimensional channel materials are used, then carrier mobility and current capability improve, but device complexity increases
Solution Approach 1:
The patent segments the channel into multiple stacked layers of low-dimensional materials separated by insulating layers. This segmentation approach enables each layer to contribute to high carrier mobility while the insulating layers provide electrical isolation, achieving high current capability without excessive structural complexity through modular layering.
Solution Approach 2:
The patent designs the low-dimensional channel structure to serve multiple functions: the thin channel provides high carrier mobility and current capability, while the stacked configuration with insulators enables effective gate control and reduces short-channel effects, achieving multiple performance goals through a unified structure.
Data Source
AI summary
A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.