Low-Inductance Bus Assembly for High-Frequency Power Converters
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional power converter apparatus using silicon-based semiconductor switching devices are limited by operating voltages less than 10 kV and switching frequencies less than 100 kHz, while wide bandgap semiconductor devices face issues with voltage and current transients due to circuit parasitics at higher frequencies.
Innovation Solution
The apparatus features a bus structure with core and extension plates arranged in parallel, using arcuate and rounded joints to reduce parasitic inductance and capacitance, and includes semiconductor switching devices connected to these buses to form DC and input/output buses, optimizing current distribution and reducing arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If wide bandgap semiconductor switching devices are operated at higher switching frequencies (20 times greater than silicon IGBTs), then switching speed and power conversion efficiency are improved, but circuit parasitics (parasitic inductance and capacitance) cause significant voltage and current transients that are detrimental to operation
Solution Approach 1:
The bus bar structure employs arcuate (curved) geometry instead of straight lines, with rounded joints connecting bus segments. This curvature design reduces sharp corners and edges that would otherwise concentrate electromagnetic fields and increase parasitic inductance, thereby minimizing voltage and current transients at high switching frequencies
Solution Approach 2:
The bus bar is divided into multiple discrete segments (first bus bar, second bus bar, third bus bar, fourth bus bar) connected by joints. This segmentation allows optimization of each segment's geometry and placement of joints at locations that minimize overall parasitic inductance, enabling high-frequency operation without excessive transients
2Productivity
If conventional interconnecting bus bars are used, then device interconnection is achieved, but parasitic inductance and capacitance limit full utilization of the capabilities of wide bandgap semiconductor devices
Solution Approach 1:
The bus bar structure extends into three-dimensional space with components arranged in different planes and elevations. The first and second bus bars are positioned at different heights, connected via joints that traverse vertical space, creating a 3D configuration that reduces parasitic effects compared to planar arrangements while maintaining electrical connectivity
Data Source
AI summary
An apparatus, such as a power converter, includes first, second and third core bus plates arranged in parallel. The apparatus also includes a first bus extension plate joined to the first core bus plate and extending therefrom at a first angle and a second bus extension plate joined to the second core bus plate and extending therefrom at a second angle. The apparatus further includes a third bus extension plated joined with the third core bus plate and disposed parallel to the first bus extension plate and a fourth bus extension plate joined with the third core bus plate and disposed parallel to the second bus extension plate.