Low-k Decoupling Structure for Multi-Tier Semiconductor Alignment
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly due to issues arising from the integration of conductive features and dielectric materials.
Innovation Solution
The semiconductor device incorporates a decoupling unit with a low-k dielectric material and a bottle-shaped cross-sectional profile, positioned between conductive features in multiple tiers. This design includes alignment marks with fluorescence material to enhance optical recognition during fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric materials are used between conductive features, then manufacturing is simpler, but parasitic capacitance increases reducing performance
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different k-values in different regions. Specifically, low-k dielectric material (k < 3.5) is used in decoupling units between conductive features where capacitance reduction is critical, while conventional dielectric materials are used in other areas where high capacitance is acceptable. This localized material selection optimizes performance in critical regions without unnecessarily complicating the entire device structure.
Solution Approach 2:
The decoupling unit is segmented into a specific bottle-shaped structure that is distinct from other dielectric regions. This segmentation allows the low-k dielectric material to be precisely positioned between conductive features where it is most needed for capacitance reduction, while other dielectric regions maintain their conventional materials. The segmented approach enables targeted performance optimization without global structural complexity.
2Productivity
If alignment marks without fluorescence material are used, then fabrication is simpler, but optical recognition during fabrication is insufficient reducing yield
Solution Approach 1:
The patent applies color changes by incorporating fluorescence material into the alignment marks. This fluorescence material causes the alignment marks to emit light at a different wavelength than the excitation light, creating a distinct optical signature that enhances visibility and recognition during fabrication processes. This optical enhancement improves measurement precision and alignment accuracy without significantly complicating the fabrication process.
3Productivity
If device dimensions are scaled down to improve computing ability, then computing performance improves, but manufacturing precision requirements increase and issues arise
Solution Approach 1:
The patent applies parameter changes by modifying the physical and optical properties of alignment marks through the incorporation of fluorescence material. This changes the optical parameters of the alignment marks, making them more detectable and measurable even at scaled dimensions. The fluorescence emission provides a stronger optical signal that can be detected with higher precision, thereby supporting the manufacturing precision requirements of scaled-down devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The decoupling units reduce parasitic capacitance, and the fluorescence alignment marks improve optical recognition, leading to enhanced yield and reliability in the semiconductor device fabrication process.
Implementation Method 1
a first set of solid alignment marks including a first-tier-alignment mark positioned on the decoupling unit of the first tier structure, and including a fluorescence material
Implementation Method 2
The decoupling units of the first tier structure and the second tier structure include a low-k dielectric material
Data Source
AI summary
The present application discloses a semiconductor device with a decoupling unit. The semiconductor device includes a first tier structure including conductive features of positioned over a substrate, and a decoupling unit the first tier structure positioned between the conductive features; a first-tier-alignment mark positioned on the decoupling unit, and including a fluorescence material; a second tier structure positioned on the first tier structure and including conductive features positioned over and deviated from the conductive features of the first tier structure, and a decoupling unit of positioned over the first tier structure, and positioned between the conductive features of the second tier structure; and a second-tier-alignment mark positioned on the decoupling unit of the second tier structure, and including a fluorescence material. The decoupling units include a low-k dielectric material and respectively include a bottle-shaped cross-sectional profile.