Low-k Decoupling Unit Layout for Fluorescent Tier Alignment
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly due to issues such as parasitic capacitance and optical recognition during the wafer fabrication process.
Innovation Solution
The semiconductor device incorporates a decoupling unit with a low-k dielectric material and a bottle-shaped cross-sectional profile, along with fluorescence alignment marks, to reduce parasitic capacitance and enhance optical recognition during fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication processes are used for scaling down semiconductor devices, then manufacturing complexity increases, but yield and reliability deteriorate due to parasitic capacitance and optical recognition issues
Solution Approach 1:
Alignment marks are formed on decoupling units before subsequent fabrication steps, enabling preliminary optical recognition and alignment verification. This preliminary action allows detection and correction of alignment issues early in the process, improving yield without adding complex post-fabrication procedures
Solution Approach 2:
Decoupling units with embedded alignment marks serve as intermediary structures that facilitate optical recognition during fabrication. These units act as mediators between the fabrication process and the final device, providing reference points that simplify alignment procedures and reduce process complexity
2Reliability
If device dimensions are scaled down to improve computing ability, then computing performance improves, but parasitic capacitance increases and reduces reliability
Solution Approach 1:
Decoupling units are extracted as separate functional elements positioned between conductive features. By taking out the decoupling function from the conventional interconnect structure and placing it in dedicated units with low-k dielectric material, parasitic capacitance between adjacent conductive features is reduced, improving device reliability at scaled dimensions
3Manufacturing precision
If alignment marks are added to decoupling units to improve optical recognition, then fabrication yield improves, but structural complexity increases
Solution Approach 1:
Alignment marks are merged with decoupling units, combining two functions into a single integrated structure. The alignment marks are formed as part of the decoupling unit fabrication process, eliminating the need for separate alignment mark structures and reducing overall structural complexity while improving optical recognition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the yield of semiconductor device fabrication by reducing parasitic capacitance and enhancing optical recognition, leading to better performance and reliability.
Implementation Method 1
a first set of solid alignment marks including a first-tier-alignment mark positioned on the decoupling unit of the first tier structure, and including a fluorescence material
Data Source
AI summary
The present application discloses a semiconductor device with a decoupling unit. The semiconductor device includes a first tier structure including conductive features of positioned over a substrate, and a decoupling unit the first tier structure positioned between the conductive features; a first-tier-alignment mark positioned on the decoupling unit, and including a fluorescence material; a second tier structure positioned on the first tier structure and including conductive features positioned over and deviated from the conductive features of the first tier structure, and a decoupling unit of positioned over the first tier structure, and positioned between the conductive features of the second tier structure; and a second-tier-alignment mark positioned on the decoupling unit of the second tier structure, and including a fluorescence material. The decoupling units include a low-k dielectric material and respectively include a bottle-shaped cross-sectional profile.