Low-k Dielectric Protection Using a Si-Containing Surface Layer
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Solution Overview
Problem
Low-k dielectric materials, such as B(C)N-based materials, used in semiconductor devices are prone to instability and thickness loss due to moisture exposure, particularly reacting with moisture to form B2O3, which is soluble in hot water, leading to film property deterioration in subsequent wet etch and annealing processes.
Innovation Solution
A method involving the use of a Si-containing gas to form a Si-rich layer on the surface of low-k dielectric features, which reacts with the material to create a protective layer that prevents damage during subsequent processes, potentially forming SiO2 for enhanced stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low-k dielectric materials (B(C)N-based) are used to reduce capacitance, then circuit performance is improved, but the materials become unstable and suffer thickness loss due to moisture exposure and reaction with wet etchants
Solution Approach 1:
A silicon-containing layer is introduced as an intermediary protective barrier between the B(C)N-based low-k dielectric material and the external environment (moisture, wet etchants). This intermediate layer prevents direct contact between the unstable low-k material and harmful substances, thereby maintaining film thickness and stability without altering the low-k material's inherent properties
Solution Approach 2:
The silicon-containing layer is formed in advance (prior to wet etching and annealing processes) to preemptively protect the low-k dielectric material. This preliminary protective action prevents thickness loss and property deterioration before the harmful processes occur, rather than attempting to repair damage afterward
2Reliability
If B(C)N-based low-k dielectric materials are used, then capacitance is reduced for better circuit performance, but the materials react with moisture to form B2O3 which is soluble in hot water, leading to film property deterioration
Solution Approach 1:
The silicon-containing layer serves as a protective intermediary that blocks moisture from reaching the B(C)N-based low-k dielectric material. By preventing moisture contact, the layer stops the chemical reaction that would otherwise form soluble B2O3 and cause film property deterioration
Solution Approach 2:
The patent converts the potential harm of silicon exposure into a beneficial protective effect. The silicon-containing layer, which could potentially be a contaminant, is instead utilized as a protective barrier that stabilizes the low-k dielectric material against moisture damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Si-rich layer effectively protects low-k dielectric features from damage during etching and annealing processes, maintaining film properties and preventing thickness loss, thereby ensuring the stability and reliability of semiconductor devices.
Implementation Method 1
A first Si-containing gas that includes silicon is introduced to the first low-k dielectric feature to make the first Si-containing gas react with the first low-k dielectric feature to form a first Si-containing layer
Implementation Method 2
The Si-rich layer effectively protects low-k dielectric features from damage during etching and annealing processes
Implementation Method 3
which reacts with the material to create a protective layer that prevents damage during subsequent processes, potentially forming SiO2 for enhanced stability
Data Source
AI summary
A semiconductor device includes a semiconductor feature, a low-k dielectric feature that is formed on the semiconductor feature, and a Si-containing layer that contains elements of silicon and that covers over the low-k dielectric feature. The Si-containing layer can prevent the low-k dielectric feature from being damaged in etch and/or annealing processes for manufacturing the semiconductor device.