Low-k PCB Interconnect Structure for High-Speed Semiconductor Packages

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Solution Overview

Problem

The rapid miniaturization and multifunctional demands of electronic products require semiconductor packages with improved reliability and electrical properties, particularly in stacked semiconductor chips with through vias, where existing solutions struggle to optimize electrical connections and reduce package capacitance for high-speed operations.

Innovation Solution

A semiconductor package design incorporating a low-k dielectric layer that penetrates the base substrate, surrounded by a connection conductive structure and lower conductive structure, with an adhesion layer between the semiconductor chip and printed circuit board, allowing for reduced package capacitance and enhanced high-speed performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional dielectric structures are used in stacked semiconductor packages, then manufacturing is simpler, but package capacitance increases and high-speed performance deteriorates

Engineering Contradiction:
Improvehigh-speed operating characteristicsVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by using low-k dielectric material specifically in the connection conductive structure regions where high-speed signals traverse, while other areas of the printed circuit board can use conventional materials. This localized application reduces package capacitance at critical signal paths without requiring the entire package to use complex low-k materials, thus improving high-speed performance while controlling manufacturing complexity.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs composite material strategies by combining low-k dielectric layers with conventional dielectric materials in a multi-layer printed circuit board structure. The low-k dielectric is strategically positioned in specific layers and regions to reduce capacitance, while other layers use standard materials, creating a composite structure that optimizes electrical performance without uniformly increasing complexity throughout the entire package.

Inventive Principle:
Principle #40Composite materials

2Reliability

If the low-k dielectric layer penetrates deep into the base substrate, then package capacitance reduces, but manufacturing precision requirements increase

Engineering Contradiction:
Improvepackage capacitanceVSAvoiddielectric layer alignment precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by pre-forming the low-k dielectric layer to extend beyond the immediate connection conductive structure boundaries during the manufacturing process. This over-extension is done in advance, allowing subsequent processing steps to precisely trim or planarize the surface, thereby ensuring proper alignment and reducing the need for extremely high precision in the initial formation of the low-k layer, while still achieving the capacitance reduction benefit.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the connection conductive structure is completely surrounded by low-k dielectric, then electrical properties improve, but manufacturing complexity increases

Engineering Contradiction:
Improveelectrical propertiesVSAvoiddielectric layer formation process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies partial action by surrounding the connection conductive structure with low-k dielectric material to the extent necessary to achieve the required electrical performance, rather than completely enclosing it in all dimensions. The low-k dielectric extends partially around the conductive structure in the vertical and lateral directions, providing sufficient capacitance reduction and electrical property improvement while avoiding the manufacturing complexity of complete encapsulation, thus optimizing the balance between performance and ease of manufacture.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design reduces package capacitance and improves high-speed operating characteristics by providing a semiconductor package with increased reliability and improved electrical properties, enabling efficient electrical connections and enhanced performance in miniaturized semiconductor devices.

Implementation Method 1

a low-k dielectric layer that penetrates the base substrate

Methodology Applied
Scientific EffectDielectric: Dielectric

Implementation Method 2

The printed circuit board may include: a base substrate; a low-k dielectric layer that penetrates the base substrate

Methodology Applied
Scientific EffectLow-k dielectric: Dielectric Permittivity

Implementation Method 3

an adhesion layer between the semiconductor chip and the printed circuit board

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS20230387026A1Semiconductor package
Publication Date: 2023.11.30 SAMSUNG ELECTRONICS CO LTD
  • US20230387026A1 patent drawing
  • US20230387026A1 patent drawing
  • US20230387026A1 patent drawing

AI summary

Disclosed is a semiconductor package comprising a solder ball, a printed circuit board on the solder ball, a bump on the printed circuit board, and a semiconductor chip on the bump. The printed circuit board includes a base substrate, a low-k dielectric layer that penetrates the base substrate, a connection conductive structure electrically connected to the bump and surrounded by the low-k dielectric layer, and a lower conductive structure electrically connected to the solder ball and the connection conductive structure. A top surface of the lower conductive structure is in contact with a first bottom surface of the low-k dielectric layer.