Low-k Dielectric Layer Deposition Using High-Frequency Plasma
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Solution Overview
Problem
Existing methods for depositing low-k dielectric materials suffer from carbon loss during plasma etch processes, leading to undesired shifts in dielectric constant and lower processing throughput.
Innovation Solution
The use of high-frequency and high-power plasma deposition techniques, along with specific precursor gases, to form low-k material layers that are less susceptible to carbon loss and dielectric constant shift, while maintaining high throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional plasma deposition methods are used to deposit low-k material, then processing throughput is reduced, but carbon loss during plasma etch is increased leading to dielectric constant shift
Solution Approach 1:
The patent applies parameter changes by utilizing high-frequency plasma power (27-100 MHz) during deposition to fundamentally alter the plasma chemistry and polymerization kinetics. This parameter change enables the formation of low-k material with superior carbon retention and reduced dielectric constant shift, resolving the contradiction between reliability and productivity by achieving both high carbon retention and high throughput simultaneously
2Reliability
If high-frequency plasma power is used during deposition, then carbon retention is improved and dielectric constant shift is reduced, but energy consumption increases
Solution Approach 1:
The patent employs parameter changes by selecting specific high-frequency plasma power ranges (27-100 MHz) that optimize the balance between dielectric constant stability and energy consumption. This frequency range enables effective polymerization and carbon retention while managing energy input, resolving the contradiction between reliability and energy usage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in low-k material layers with minimal dielectric constant shift and high carbon retention, achieving improved processing efficiency and throughput.
Implementation Method 1
providing first plasma power to polymerize the one or more precursors within the reaction chamber to form low-k material
Implementation Method 2
providing one or more precursors to the reaction chamber... providing first plasma power to polymerize the one or more precursors within the reaction chamber to form low-k material
Data Source
AI summary
Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.