Low-k Spacer Structure for Semiconductor Device Capacitive Coupling
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing capacitive coupling between the gate and source/drain, which affects current control and can lead to inefficiencies in scaling and increased short channel effects.
Innovation Solution
A semiconductor device with a spacer structure incorporating a material with a low dielectric constant, such as SiOCN, is used to reduce capacitive coupling between the gate and source/drain, including a triple spacer structure with silicon nitride and SiOCN layers to lower the total dielectric constant and improve AC performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional spacer materials (high dielectric constant) are used, then the spacer structure provides good mechanical support and etch selectivity, but capacitive coupling between gate and source/drain increases
Solution Approach 1:
The patent changes the dielectric constant parameter of the spacer material from high (conventional) to low (SiOCN with dielectric constant of 2.5-3.5) to reduce capacitive coupling between gate and source/drain, thereby improving current control and suppressing short channel effects
Solution Approach 2:
The patent employs a composite spacer structure consisting of multiple layers including SiOCN (low dielectric constant) and silicon nitride (high dielectric constant) layers, where each layer serves different functions: SiOCN reduces capacitive coupling while silicon nitride provides mechanical support and etch selectivity
2Productivity
If device scaling is pursued to increase density, then transistor density improves, but short channel effects and capacitive coupling increase
Solution Approach 1:
By changing the dielectric constant parameter of the spacer material to low values, the patent enables continued device scaling while suppressing short channel effects and capacitive coupling, thus maintaining transistor performance at higher densities
Solution Approach 2:
The low dielectric constant SiOCN spacer acts as an intermediary material between the gate electrode and source/drain regions, reducing the harmful electromagnetic interaction (capacitive coupling) while allowing the device to benefit from scaling effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a low dielectric constant spacer structure effectively reduces capacitive coupling, enhancing current control and suppressing short channel effects, thereby improving the scaling and performance of semiconductor devices.
Implementation Method 1
reduce a capacitive coupling phenomenon between a gate and a source and/or a drain
Data Source
AI summary
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.