Bidirectional ESD Protection Semiconductor Device with Low Leakage
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Solution Overview
Problem
Bidirectional ESD protection devices struggle to achieve a breakdown voltage below 6 Volts while maintaining a low leakage current, as existing solutions like Zener diodes face limitations due to Zener tunneling, and MOS diodes are unsuitable for bidirectional functionality due to their gate connection requirements.
Innovation Solution
A semiconductor device arrangement comprising a field effect transistor with first and second input terminals, a control terminal, and diodes connected between these terminals, allowing for bidirectional operation by configuring the diodes to achieve symmetrical IV characteristics and low leakage currents, including body diodes and control terminal diodes integrated on a semiconductor substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Zener diodes are used for bidirectional ESD protection, then breakdown voltage can be achieved, but leakage current increases due to Zener tunneling
Solution Approach 1:
The patent changes the breakdown mechanism from Zener tunneling to avalanche breakdown by selecting appropriate doping concentrations and junction depths. This parameter change allows achieving breakdown voltages below 6V while maintaining low leakage currents, as avalanche breakdown has lower tunneling current compared to Zener breakdown.
Solution Approach 2:
The patent uses a composite structure combining two Zener diodes in back-to-back configuration with opposite polarities. This composite arrangement enables bidirectional protection while allowing each diode to operate in its optimal breakdown region, reducing overall leakage current compared to a single diode solution.
2Object-generated harmful factors
If MOS diodes are used for ESD protection, then low leakage current and low switching voltage are achieved, but bidirectional functionality is not possible
Solution Approach 1:
The patent segments the protection function into two separate diodes with opposite polarities connected in back-to-back configuration. Each diode handles one polarity of ESD events, enabling bidirectional functionality while maintaining the low leakage current characteristics of MOS diodes.
Solution Approach 2:
The patent creates a universal protection device that can handle both positive and negative ESD events using the same structural configuration. The symmetrical back-to-back diode arrangement provides multi-functionality, making the device adaptable to bidirectional ESD protection requirements while maintaining low leakage performance.
3Reliability
If breakdown voltage is reduced below 6 Volts, then better ESD protection for low voltage circuits is achieved, but leakage current increases
Solution Approach 1:
The patent achieves breakdown voltages below 6V by adjusting doping concentrations, junction depths, and device geometry parameters. By optimizing these parameters, the device achieves low breakdown voltage through avalanche breakdown mechanism while maintaining low leakage current, overcoming the traditional trade-off.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves bidirectional ESD protection with a breakdown voltage below 6 Volts and low leakage currents, enabling effective protection for circuits experiencing ESD events above and below a predetermined reference voltage, with the device capable of symmetrical operation regardless of polarity.
Implementation Method 1
a first diode connected between the first terminal and the control terminal; and a second diode connected between the second terminal and the control terminal
Implementation Method 2
a field effect transistor comprising first and second input terminals; a control terminal
Implementation Method 3
Bidirectional ESD protection devices can be suitable for protecting circuits where ESD events are above and below a predetermined reference voltage
Implementation Method 4
for both polarities the breakdown voltage is much larger than a forward voltage
Data Source
AI summary
A semiconductor device arrangement and a method of operating a semiconductor device arrangement. The semiconductor device can be arranged for bidirectional operation. The semiconductor device arrangement can comprise: a field effect transistor comprising first and second input terminals; a control terminal; a first diode connected between the first terminal and the control terminal; and a second diode connected between the second terminal and the control terminal; wherein the first terminal and the second terminal are configured and arranged to be connected to respective signal lines.