Resist Composition Using Low-Log P Cations for Fine Pattern Uniformity
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Solution Overview
Problem
Existing resist compositions fail to achieve uniformity and reduction in roughness of pattern width, particularly in the formation of fine patterns with dimensions less than 100 nm, which is essential for advanced semiconductor and liquid crystal display elements.
Innovation Solution
A resist composition that includes a base material component and a compound with a specific cation moiety having a Log P value of less than 7.7, which generates an acid upon exposure and controls acid diffusion, allowing for the formation of resist patterns with improved lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for fine pattern formation, then the pattern width can be achieved, but the uniformity and roughness of the pattern width deteriorate
Solution Approach 1:
The patent introduces a specific compound as an intermediary substance between the base material and the acid generator. This compound has a cation moiety with Log P < 7.7 that mediates acid diffusion control, thereby improving pattern uniformity and reducing roughness without sacrificing pattern formation capability
Solution Approach 2:
The patent changes the chemical parameter of the resist composition by specifying a compound with cation moiety having Log P < 7.7. This parameter change optimizes acid diffusion characteristics, leading to improved manufacturing precision and reduced harmful surface roughness in the formed patterns
2Manufacturing precision
If acid diffusion is not controlled, then the lithography process is simpler, but the lithography characteristics deteriorate
Solution Approach 1:
The compound with cation moiety acts as an intermediary that controls acid diffusion in a relatively simple manner. By selecting a compound with specific properties (Log P < 7.7), the patent achieves effective acid diffusion control without requiring complex multi-component systems or additional processing steps
Data Source
AI summary
A resist composition including a base material component (A) whose solubility in a developing solution is changed due to the action of an acid, and a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), in which the cation moiety of the compound (D0) has a Log P value of less than 7.7. In the formula, Mm+ represents an m-valent organic cation, Rd0 represents a substituent, p represents an integer of 0 to 3, q represents an integer of 0 to 3, n represents an integer of 2 or greater, and a relationship of “n+p≤(q×2)+5” is satisfied.