Temperature Detection Device Using Low-Mobility Semiconductor Oscillator
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Solution Overview
Problem
Display panels, particularly LCD and OLED, face challenges in maintaining optimal performance due to temperature fluctuations, which affect liquid crystal characteristics and operation stability, necessitating effective temperature detection solutions.
Innovation Solution
A device for temperature detection incorporating a delay unit with an odd number of inverters, a switching transistor, a temperature sensitive transistor, and capacitors, utilizing semiconductor materials like amorphous silicon or oxide semiconductors with low electron mobility to generate a periodic oscillation waveform, allowing for temperature representation through waveform period or frequency analysis.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional temperature detection methods are used in display panels, then the detection can be implemented, but the detection sensitivity and accuracy are insufficient to effectively compensate for temperature changes
Solution Approach 1:
The patent changes the material parameter of the transistor active area from conventional high-mobility semiconductor to low-mobility semiconductor material (0.1-20 cm²V⁻¹s⁻¹), which fundamentally alters the oscillation characteristics and enables higher temperature detection sensitivity. This parameter change in material mobility directly improves the measurement precision of temperature detection.
2Measurement precision
If the active area of transistors uses conventional semiconductor materials with high electron mobility, then the transistor operation is efficient, but the temperature detection sensitivity is reduced
Solution Approach 1:
The patent explicitly changes the electron mobility parameter from conventional high values to a specific range (0.1-20 cm²V⁻¹s⁻¹) by selecting low-mobility semiconductor materials. This parameter inversion enables the oscillation period to be more sensitive to temperature changes, thereby improving temperature detection accuracy despite the lower electron mobility.
3Adaptability or versatility
If display panels operate without temperature compensation, then the device complexity is low, but the display effect changes with temperature fluctuations
Solution Approach 1:
The patent integrates temperature detection functionality into the existing display panel circuitry by using the low-mobility transistor oscillation circuit that can serve both as a delay unit for display driving and as a temperature sensor. This multi-functionality approach enables temperature compensation capability without significantly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device enhances temperature detection sensitivity and accuracy, enabling better compensation for temperature changes in display panels, thereby improving display performance and stability across varying temperatures.
Implementation Method 1
a temperature sensitive transistor having a control electrode coupled to a bias voltage end of the device, a first electrode coupled to the input end of the delay unit, and a second electrode coupled to the ground node of the device
Implementation Method 2
a delay unit including an odd number of inverters coupled end to end, wherein an active area of a transistor of at least one of the inverters includes a semiconductor material having an electron mobility between 0.1 cm2V−1s−1 and 20 cm2V−1s−1
Data Source
AI summary
The embodiments of the present disclosure relate to a device for temperature detection, including a delay unit including an odd number of inverters coupled end to end, a switching transistor having a control electrode coupled to an output end of the delay unit, a first electrode coupled to an operating voltage node of the device, and a second electrode coupled to an input end of the delay unit, a first capacitor having a first end coupled to the input end of the delay unit, and a second end coupled to the first electrode of the switching transistor or a ground node of the device, and a temperature sensitive transistor having a control electrode coupled to a bias voltage end of the device, a first electrode coupled to the input end of the delay unit, and a second electrode coupled to the ground node of the device.