Low-Molecular Resist Compound for High-Resolution Lithography Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current film forming materials for lithography and optical components face challenges in achieving high solubility in organic solvents, etching resistance, and resist pattern formability simultaneously.
Innovation Solution
A new compound with a specific structure, represented by formula (1), is developed, which exhibits excellent solubility in organic solvents, high heat resistance, and etching resistance, and is capable of forming films through wet processes like spin coating or screen printing, while maintaining high refractive index and adhesiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If polymer-based resist materials with high molecular weight are used, then film strength and adhesion are improved, but pattern resolution deteriorates due to roughness and difficulty in controlling pattern dimensions
Solution Approach 1:
The patent changes the molecular weight parameter from high (10,000-100,000) to low (below 1,000), and modifies the molecular structure from polymer to small molecule with specific functional groups. This parameter change resolves the contradiction by enabling high pattern resolution while maintaining film strength through strategic molecular design with multiple hydroxyl groups and aromatic rings that provide both low molecular weight and sufficient mechanical properties.
2Manufacturing precision
If low molecular weight resist materials are used, then pattern resolution is improved, but film strength and adhesion deteriorate
Solution Approach 1:
The patent creates a composite molecular structure combining multiple functional groups (hydroxyl groups, aromatic rings, and linking groups) within a single low molecular weight molecule. This composite approach allows the material to exhibit both low molecular weight characteristics (for high resolution) and enhanced film strength through the synergistic effects of multiple functional groups that improve adhesion and mechanical properties.
3Length of moving object
If resist film thickness is reduced, then pattern miniaturization is improved, but pattern collapse occurs due to insufficient supporting film thickness
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material, introducing specific functional groups that enhance film-forming properties and mechanical strength. This allows the use of thinner films without collapse because the modified molecular structure provides sufficient supporting strength even at reduced thickness, resolving the contradiction between miniaturization and pattern stability.
4Manufacturing precision
If conventional resist underlayer films are used, then etching rate selectivity is improved, but solubility in organic solvents deteriorates
Solution Approach 1:
The patent changes the chemical structure parameters by replacing polymer-based structures with small molecule structures containing specific functional groups (hydroxyl groups, aromatic rings). This structural modification maintains etching rate selectivity while dramatically improving solubility in organic solvents, allowing the material to be applied via wet processes. The small molecular weight and functional group configuration enable both high etching selectivity and good solubility simultaneously.
Data Source
AI summary
An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).